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Shen et al., 1996 - Google Patents

X-ray-diffraction study of size-dependent strain in quantum-wire structures

Shen et al., 1996

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Document ID
16658430375796062187
Author
Shen Q
Kycia S
Tentarelli E
Schaff W
Eastman L
Publication year
Publication venue
Physical Review B

External Links

Snippet

We report a synchrotron x-ray-diffraction study of the strain field in embedded In 0.2 Ga 0.8 As/GaAs (001) quantum wires of widths 50–250 nm. Our results show a size-dependent orthorhombic lattice deformation in the wires and a linearly strained interfacial region near …
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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANO-TECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
    • B82Y10/00—Nano-technology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANO-TECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
    • B82Y20/00—Nano-optics, e.g. quantum optics or photonic crystals

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