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Jun et al., 2005 - Google Patents

Evaluation of 3C-SiC nanomechanical resonators using room temperature magnetomotive transduction

Jun et al., 2005

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Document ID
13059752721780388436
Author
Jun S
Huang X
Hone J
Zorman C
Mehregany M
Publication year
Publication venue
SENSORS, 2005 IEEE

External Links

Snippet

We report our efforts toward using room temperature magnetomotive transduction technique for SiC nanomechanical resonators. The resonators were nanomachined from 30 nm-thick 3C-SiC thin films epitaxially grown on (100) silicon. The structures show mechanical …
Continue reading at scholar.archive.org (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02244—Details of micro-electro-mechanical resonators
    • H03H2009/02488—Vibration modes

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