Kim et al., 2006 - Google Patents
Fluxless flip–chip SnAu solder interconnect on thin Si wafers and Cu laminated polyimide filmsKim et al., 2006
- Document ID
- 12806728576875692719
- Author
- Kim D
- Lee C
- Publication year
- Publication venue
- Materials Science and Engineering: A
External Links
Snippet
Initial success of new fluxless flip–chip interconnect technique is reported. Non-eutectic Sn- rich SnAu solder bumps are used to connect thin silicon chip to glass substrate and Cu laminated polyimide film, respectively. Fluxless process development on tin-rich alloys is …
- 229910000679 solder 0 title abstract description 58
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0103—Zinc [Zn]
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01049—Indium [In]
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Mei et al. | Brittle interfacial fracture of PBGA packages soldered on electroless nickel/immersion gold | |
Kannojia et al. | A review of intermetallic compound growth and void formation in electrodeposited Cu–Sn Layers for microsystems packaging | |
Sharif et al. | Effect of volume in interfacial reaction between eutectic Sn–Pb solder and Cu metallization in microelectronic packaging | |
Chen et al. | A fluxless bonding technology using indium-silver multilayer composites | |
US20080224328A1 (en) | Temporary chip attach using injection molded solder | |
JPH07302797A (en) | Semiconductor element, its manufacturing and method of application | |
Mannan et al. | Materials and processes for implementing high-temperature liquid interconnects | |
Kim et al. | Fluxless flip–chip SnAu solder interconnect on thin Si wafers and Cu laminated polyimide films | |
Jang et al. | High-temperature lead-free SnSb solders: Wetting reactions on Cu foils and phased-in Cu–Cr thin films | |
Lin et al. | 40$\mu {\rm m} $ Flip-Chip process using Ag–in transient liquid phase reaction | |
JP2004349487A (en) | Conductive ball and method for forming electrode of electronic component, and electronic component and electronic equipment | |
Hoivik et al. | Fluxless wafer-level Cu-Sn bonding for micro-and nanosystems packaging | |
JP5231727B2 (en) | Joining method | |
Kim et al. | Fluxless flip-chip solder joint fabrication using electroplated Sn-rich Sn-Au structures | |
Kang et al. | Flip-chip interconnections: past, present, and future | |
JP2005032834A (en) | Joining method of semiconductor chip and substrate | |
JP5376356B2 (en) | Electronic element mounting method and electronic component mounted by the mounting method | |
Hu et al. | A Cu Pillar Bump Bonding Method Using Au-Sn Alloy Cap as the Interconnection Layer | |
Lee et al. | Fundamentals of fluxless soldering technology | |
Xiao et al. | The effect of Cu stud structure and eutectic solder electroplating on intermetallic growth and reliability of flip-chip solder bump | |
Kim et al. | Fluxless bonding of silicon to Ag-cladded copper using Sn-based alloys | |
US7078330B2 (en) | Metal electrode and bonding method using the metal electrode | |
Wang et al. | Fluxless bonding of large silicon chips to ceramic packages using electroplated eutectic Au/Sn/Au structures | |
Azlina et al. | Effect of Solder Volume on Interfacial Reaction between SAC405 Solders and EN (B) EPIG Surface Finish | |
Kim et al. | Electroplated Sn-Au structures for fabricating fluxless flip-chip Sn-rich solder joints |