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Zaininger, 1966 - Google Patents

Irradiation of MIS capacitors with high energy electrons

Zaininger, 1966

Document ID
12504544767626260218
Author
Zaininger K
Publication year
Publication venue
IEEE Transactions on Nuclear Science

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Snippet

High-energy electron bombardment of Me-SiO2-Si and Me-Si3N4-Si capacitors has been investigated by means of CV and GV measurements. The bombardment usually results in the introduction of positive charge into the insulator. This effect is explained by a physical …
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    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
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