[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

KAPLAN et al., 1985 - Google Patents

Method for the deposition of high-quality crystal epitaxial films of iron(Patent)

KAPLAN et al., 1985

Document ID
11603607572285480431
Author
KAPLAN R
BOTTKA N
Publication year
Publication venue
Patent Number4, 540, 546

External Links

Continue reading at scholar.google.com (other versions)

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials

Similar Documents

Publication Publication Date Title
KAPLAN et al. Method for the deposition of high-quality crystal epitaxial films of iron(Patent)
JPS53108389A (en) Manufacture for semiconductor device
JPS5634143A (en) Magnetic recording medium
JPS5624928A (en) Electrode forming method of semiconductor
JPS5230392A (en) Electrode and it's manufacturing process
JPS52124860A (en) Electrode formation method for semiconductor devices
JPS5557246A (en) Electron-ray contracting apparatus and its manufacturing method
JPS57183053A (en) Semiconductor device
JPS5351964A (en) Selective growth method for semiconductor crystal
JPS544567A (en) Growing apparatus of ion beam crystal
JPS5339858A (en) Impurity diffusion method
JPS5621082A (en) Watch dial
JPS5419200A (en) Magnetic recording medium process
JPS5515285A (en) Forming method for indium-antimony thin film
JPS5367353A (en) Manufacturing device of semiconductor crystal
JPS53113730A (en) Metallic pattern forming method
JPS56165354A (en) Semiconductor device
JPS5445571A (en) Manufacture for semiconductor device
JPS52100872A (en) Fabrication of mask for x-ray exposure
JPS5380160A (en) Manufacture of substrate for semiconductor device
JPS565545A (en) Transfer mask for x-ray exposure and its production
JPS5784168A (en) Semiconductor device
JPS57137469A (en) Sputtering device
JPS6410522A (en) Manufacture of oxide superconductor thin film
JPS5468187A (en) Producting of semiconductor laser