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Kaneko et al., 2009 - Google Patents

Normally-off AlGaN/GaN HFETs using NiO x gate with recess

Kaneko et al., 2009

Document ID
1383716623040986480
Author
Kaneko N
Machida O
Yanagihara M
Iwakami S
Baba R
Goto H
Iwabuchi A
Publication year
Publication venue
2009 21st International Symposium on Power Semiconductor Devices & IC's

External Links

Snippet

The normally-off AlGaN/GaN HFETs on Si substrate were fabricated. To realize normally-off characteristic, recess was formed under the gate electrode and NiOx was formed as a gate electrode. As a result, the fabricated AlGaN/GaN HFET with a gate width of 157 mm …
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