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Horng et al., 2014 - Google Patents

Performance of GaN-based light-emitting diodes fabricated using GaN epilayers grown on silicon substrates

Horng et al., 2014

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Document ID
10481736287538271507
Author
Horng R
Wu B
Tien C
Ou S
Yang M
Kuo H
Wuu D
Publication year
Publication venue
Optics express

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Snippet

Light extraction of GaN-based light-emitting diodes grown on Si (111) substrate (GaN-on-Si based LEDs) is presented in this study. Three different designs of GaN-on-Si based LEDs with the lateral structure, lateral structure on mirror/Si (100) substrate, and vertical structure …
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