Gotoh et al., 2003 - Google Patents
Formation and control of stoichiometric hafnium nitride thin films by direct sputtering of hafnium nitride targetGotoh et al., 2003
- Document ID
- 10057976216695512817
- Author
- Gotoh Y
- Liao M
- Tsuji H
- Ishikawa J
- Publication year
- Publication venue
- Japanese journal of applied physics
External Links
Snippet
Hafnium nitride thin films were prepared by radio-frequency magnetron sputter deposition with a hafnium nitride target. Deposition was performed with various rf powers, argon pressures, and substrate temperatures, in order to investigate the influences of these …
- 229910052735 hafnium 0 title abstract description 18
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- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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