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Gotoh et al., 2003 - Google Patents

Formation and control of stoichiometric hafnium nitride thin films by direct sputtering of hafnium nitride target

Gotoh et al., 2003

Document ID
10057976216695512817
Author
Gotoh Y
Liao M
Tsuji H
Ishikawa J
Publication year
Publication venue
Japanese journal of applied physics

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Snippet

Hafnium nitride thin films were prepared by radio-frequency magnetron sputter deposition with a hafnium nitride target. Deposition was performed with various rf powers, argon pressures, and substrate temperatures, in order to investigate the influences of these …
Continue reading at iopscience.iop.org (other versions)

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    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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