[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Ji et al., 2006 - Google Patents

Growth of stoichiometric Cu3N thin films by reactive magnetron sputtering

Ji et al., 2006

View PDF
Document ID
14382927312884408306
Author
Ji A
Huang R
Du Y
Li C
Wang Y
Cao Z
Publication year
Publication venue
Journal of crystal growth

External Links

Snippet

Copper nitride (Cu3N) is a thermally unstable material; therefore both the deposition of a stoichiometric sample and the reliable characterization of its properties constitute a big challenge. We reported here the growth of stoichiometric Cu3N films on Si (100) wafer by …
Continue reading at citeseerx.ist.psu.edu (PDF) (other versions)

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof

Similar Documents

Publication Publication Date Title
Ji et al. Growth of stoichiometric Cu3N thin films by reactive magnetron sputtering
Kim et al. Structural and optical characterization of Cu3N films prepared by reactive RF magnetron sputtering
Hotový et al. Characterization of NiO thin films deposited by reactive sputtering
Ghosh et al. Effect of substrate temperature on the physical properties of copper nitride films by rf reactive sputtering
Belova et al. Rapid electron beam assisted patterning of pure cobalt at elevated temperatures via seeded growth
Wang et al. Copper nitride (Cu3N) thin films deposited by RF magnetron sputtering
Du et al. Electrical conductivity and photoreflectance of nanocrystalline copper nitride thin films deposited at low temperature
Kaminska et al. Transparent p-type ZnO films obtained by oxidation of sputter-deposited Zn3N2
Siciliano et al. Tellurium sputtered thin films as NO2 gas sensors
Lu et al. Study of phase transition and electrical resistivity of tantalum nitride films prepared by DC magnetron sputtering with OES detection system
Ulrich et al. Variation of carbon concentration, ion energy, and ion current density of magnetron-sputtered boron carbonitride films
Bessonov et al. Dimethylgold (III) carboxylates as new precursors for gold CVD
Sobia et al. Effect of nitrogen addition on hydrogen incorporation in diamond nanorod thin films
Reinke et al. The molybdenum–carbon interface: formation and electronic structure of the carbide layer
Paranjape et al. Metal–organic chemical vapour deposition of thin films of cobalt on different substrates: study of microstructure
Wang et al. Characterization of surface morphology of copper tungsten thin film by surface fractal geometry and resistivity
Uglov et al. Effect of explosive thermal evaporation conditions on the phase composition, crystallite orientation, electrical and magnetic properties of heteroepitaxial InSb films on semi-insulating GaAs (100)
Wang et al. Competition between diamond nucleation and growth under bias voltage by microwave plasma chemical vapor deposition
Schmidt et al. Top injection reactor tool with in situ spectroscopic ellipsometry for growth and characterization of ALD thin films
Fominski et al. Structural, electrical and mechanical properties of ВСх films prepared by pulsed laser deposition from mixed and dual boron-diamond/graphite targets
Chen et al. Evaluating substrate bias on the phase-forming behavior of tungsten thin films deposited by diode and ionized magnetron sputtering
Iosad et al. Properties of (Nb0. 35, Ti0. 15) xNi1− x thin films deposited on silicon wafers at ambient substrate temperature
Sánchez-López et al. AlN thin films prepared by ion beam induced chemical vapour deposition
Xu et al. Lattice extension in Cu3NMgx thin films and the induced effect
Zhang et al. The effect of hydrogen on copper nitride thin films deposited by magnetron sputtering