[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Tian et al., 2021 - Google Patents

A thermal network model for thermal analysis in automotive IGBT modules

Tian et al., 2021

Document ID
9566643550713208351
Author
Tian Y
An T
Qin F
Gong Y
Liang C
Publication year
Publication venue
2021 22nd International Conference on Electronic Packaging Technology (ICEPT)

External Links

Snippet

With the developing of insulated gate bipolar transistor (IGBT), a method to accurately solve the detailed problems caused by thermal behaviors in different locations and layers of automotive IGBT modules is necessary. The paper proposes an RC thermal network for …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/28Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof operating with Peltier or Seebeck effect only
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00

Similar Documents

Publication Publication Date Title
Ma et al. A three-dimensional boundary-dependent compact thermal network model for IGBT modules in new energy vehicles
Wu et al. A temperature-dependent thermal model of IGBT modules suitable for circuit-level simulations
Jia et al. PSpice-COMSOL-based 3-D electrothermal–mechanical modeling of IGBT power module
Reichl et al. 3-D thermal component model for electrothermal analysis of multichip power modules with experimental validation
Yang et al. A temperature-dependent Cauer model simulation of IGBT module with analytical thermal impedance characterization
Li et al. Improved thermal couple impedance model and thermal analysis of multi-chip paralleled IGBT module
Chen et al. Electrothermal-based junction temperature estimation model for converter of switched reluctance motor drive system
Ning et al. Power module and cooling system thermal performance evaluation for HEV application
Race et al. Circuit-based electrothermal modeling of SiC power modules with nonlinear thermal models
Deng et al. Correction of delay-time-induced maximum junction temperature offset during electrothermal characterization of IGBT devices
Yang et al. Distributed thermal modeling for power devices and modules with equivalent heat flow path extraction
Guo et al. Real-time average junction temperature estimation for multichip IGBT modules with low computational cost
Shi et al. Dynamic igbt three-dimensional thermal network model considering base solder degradation and thermal coupling between igbt chips
Li et al. EM-electrothermal analysis of semiconductor power modules
Bahman et al. A novel 3D thermal impedance model for high power modules considering multi-layer thermal coupling and different heating/cooling conditions
Heng et al. A 3-D thermal network model for monitoring of IGBT modules
Tian et al. A thermal network model for thermal analysis in automotive IGBT modules
Hu et al. Monitoring power module solder degradation from heat dissipation in two opposite directions
Wei et al. Modeling and analysis of thermal resistances and thermal coupling between power devices
Liu et al. A method to derive the coupling thermal resistances at junction-to-case level in multichip power modules
Ren et al. Finite element model optimization and thermal network parameter extraction of press-pack IGBT
Lu et al. A 3-D Temperature-Dependent Thermal Model of IGBT Modules for Electric Vehicle Application Considering Various Boundary Conditions
Hu et al. Deep learning neural networks for heat-flux health condition monitoring method of multi-device power electronics system
Wang et al. Multi-physics coupling analysis of high-power IGBT module bonding wires fault considering stray inductance of main circuit
Chen et al. The distributed heat source modeling method for the finite element simulation of IGBTs