Tian et al., 2021 - Google Patents
A thermal network model for thermal analysis in automotive IGBT modulesTian et al., 2021
- Document ID
- 9566643550713208351
- Author
- Tian Y
- An T
- Qin F
- Gong Y
- Liang C
- Publication year
- Publication venue
- 2021 22nd International Conference on Electronic Packaging Technology (ICEPT)
External Links
Snippet
With the developing of insulated gate bipolar transistor (IGBT), a method to accurately solve the detailed problems caused by thermal behaviors in different locations and layers of automotive IGBT modules is necessary. The paper proposes an RC thermal network for …
- 238000002076 thermal analysis method 0 title description 5
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L35/28—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof operating with Peltier or Seebeck effect only
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Ma et al. | A three-dimensional boundary-dependent compact thermal network model for IGBT modules in new energy vehicles | |
Wu et al. | A temperature-dependent thermal model of IGBT modules suitable for circuit-level simulations | |
Jia et al. | PSpice-COMSOL-based 3-D electrothermal–mechanical modeling of IGBT power module | |
Reichl et al. | 3-D thermal component model for electrothermal analysis of multichip power modules with experimental validation | |
Yang et al. | A temperature-dependent Cauer model simulation of IGBT module with analytical thermal impedance characterization | |
Li et al. | Improved thermal couple impedance model and thermal analysis of multi-chip paralleled IGBT module | |
Chen et al. | Electrothermal-based junction temperature estimation model for converter of switched reluctance motor drive system | |
Ning et al. | Power module and cooling system thermal performance evaluation for HEV application | |
Race et al. | Circuit-based electrothermal modeling of SiC power modules with nonlinear thermal models | |
Deng et al. | Correction of delay-time-induced maximum junction temperature offset during electrothermal characterization of IGBT devices | |
Yang et al. | Distributed thermal modeling for power devices and modules with equivalent heat flow path extraction | |
Guo et al. | Real-time average junction temperature estimation for multichip IGBT modules with low computational cost | |
Shi et al. | Dynamic igbt three-dimensional thermal network model considering base solder degradation and thermal coupling between igbt chips | |
Li et al. | EM-electrothermal analysis of semiconductor power modules | |
Bahman et al. | A novel 3D thermal impedance model for high power modules considering multi-layer thermal coupling and different heating/cooling conditions | |
Heng et al. | A 3-D thermal network model for monitoring of IGBT modules | |
Tian et al. | A thermal network model for thermal analysis in automotive IGBT modules | |
Hu et al. | Monitoring power module solder degradation from heat dissipation in two opposite directions | |
Wei et al. | Modeling and analysis of thermal resistances and thermal coupling between power devices | |
Liu et al. | A method to derive the coupling thermal resistances at junction-to-case level in multichip power modules | |
Ren et al. | Finite element model optimization and thermal network parameter extraction of press-pack IGBT | |
Lu et al. | A 3-D Temperature-Dependent Thermal Model of IGBT Modules for Electric Vehicle Application Considering Various Boundary Conditions | |
Hu et al. | Deep learning neural networks for heat-flux health condition monitoring method of multi-device power electronics system | |
Wang et al. | Multi-physics coupling analysis of high-power IGBT module bonding wires fault considering stray inductance of main circuit | |
Chen et al. | The distributed heat source modeling method for the finite element simulation of IGBTs |