[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Fu, 2011 - Google Patents

Application of Electron Beam Treatment in Polycrystalline Silicon Films Manufacture for Solar Cell

Fu, 2011

View PDF
Document ID
9437080726203257928
Author
Fu L
Publication year
Publication venue
Solar Cells-Thin-Film Technologies

External Links

Snippet

Solar cell attracts more and more attentions recently since it transfers and storages energy directly from the sun light without consuming natural resources on the earth and polluting environment. In 2002, the solar industry delivered more than 500 MW per year of …
Continue reading at www.ir.juit.ac.in:8080 (PDF) (other versions)

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/54—Material technologies
    • Y02E10/547—Monocrystalline silicon PV cells
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising material or reactants forming it in situ to the molten zone
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method

Similar Documents

Publication Publication Date Title
Xu et al. Behavior of aluminum oxide, intermetallics and voids in Cu–Al wire bonds
Gu et al. Low-cost solar grade silicon purification process with Al–Si system using a powder metallurgy technique
Kvande et al. Influence of crucible and coating quality on the properties of multicrystalline silicon for solar cells
KR20090024802A (en) Apparatus and Method for Manufacturing Silicon for Semiconductor
Li et al. Removal of impurities from metallurgical grade silicon during Ga-Si solvent refining
Albin et al. Colossal grain growth in Cd (Se, Te) thin films and their subsequent use in CdTe epitaxy by close-spaced sublimation
Triboulet The Travelling Heater Method (THM) for Hg1− xCdxTe and related materials
Bellanger et al. Polycrystalline silicon films obtained by crystallization of amorphous silicon on aluminium based substrates for photovoltaic applications
Hainey et al. Aluminum-catalyzed silicon nanowires: Growth methods, properties, and applications
Aberle et al. Formation of large-grained uniform poly-Si films on glass at low temperature
Ciszek Photovoltaic materials and crystal growth research and development in the Gigawatt era
Hu et al. Interaction of impurity distribution and groove at the micro-zone of solid/liquid interface in silicon
Nose et al. Floating cast method to realize high-quality Si bulk multicrystals for solar cells
Dawless et al. Production of extreme-purity aluminum and silicon by fractional crystallization processing
NO322246B1 (en) Process for preparing directed solidified silicon ingots
US9352969B2 (en) Process for manufacturing silicon-based nanoparticles from metallurgical-grade silicon or refined metallurgical-grade silicon
Taishi et al. Czochralski-growth of germanium crystals containing high concentrations of oxygen impurities
Taishi et al. Reduction of grown-in dislocation density in Ge Czochralski-grown from the B2O3-partially-covered melt
EP1485956B2 (en) Process of producing multicrystalline silicon substrate
Fu Application of Electron Beam Treatment in Polycrystalline Silicon Films Manufacture for Solar Cell
Lin et al. Structural properties of the solidified-Al/regrown-Si structures of printed Al contacts on crystalline Si solar cells
Fu et al. Influence of the energy density on the structure and morphology of polycrystalline silicon films treated with electron beam
Li et al. Surface morphology and impurity distribution of electron beam recrystallized silicon films on low cost substrates for solar cell absorber
Fu et al. Study on the microstructure of polycrystalline silicon films treated with line shaped electron beam
Winger et al. Grain growth in CdTe films during CdCl 2 Treatment: TeCl 4 theory