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Liu et al., 2019 - Google Patents

TCAD model for TeraFET detectors operating in a large dynamic range

Liu et al., 2019

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Document ID
8833177360597793004
Author
Liu X
Shur M
Publication year
Publication venue
IEEE Transactions on Terahertz Science and Technology

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Snippet

Technology computer-aided design (TCAD) models for AlGaAs/InGaAs and AlGaN/GaN and silicon-on-insulator (SOI) TeraFETs are in good agreement with the measured current– voltage characteristics and the response to the sub-THz radiation. They allowed us to …
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    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
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    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
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