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Liu et al., 2022 - Google Patents

InGaAs/InP Schottky barrier diode with submicron T-shaped contact and Cut-Off frequency above 9 THz

Liu et al., 2022

Document ID
5484682535321615845
Author
Liu X
Zhang Y
Wang H
Wu C
Wei H
Xu Y
Zhou J
Jin Z
Yan B
Publication year
Publication venue
Infrared Physics & Technology

External Links

Snippet

A high-performance terahertz InP Schottky Barrier Diode (SBD) with a submicron T-shaped contact structure featuring a high theoretical cut-off frequency of 9.0 THz is reported in this paper. The Schottky contact with a minimum diameter of 0.2 μm was achieved by photoresist …
Continue reading at www.sciencedirect.com (other versions)

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