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Chowdhury et al., 2004 - Google Patents

Charge trapping and interface characteristics of thermally evaporated HfO2

Chowdhury et al., 2004

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Document ID
2133514005888867193
Author
Chowdhury N
Garg R
Misra D
Publication year
Publication venue
Applied physics letters

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Snippet

Charge trapping and interface characteristics of hafnium oxide (HfO 2) films, grown by standard thermal evaporation, were investigated. High frequency capacitance–voltage and conductance measurements were carried out at various temperatures on aluminum gate …
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