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Khan, 2013 - Google Patents

Engineering of impurity doped regions in semiconducting BaSi [2] by MBE for thin film solar cells application

Khan, 2013

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Document ID
8433896679346017313
Author
Khan M
Publication year

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Materials for low cost, eco-friendly, and high efficiency solar cell applications have become of great importance. BaSi2 semiconducting material has a large optical absorption coefficient of over 3× 104 cm-1 at 1.5 eV, as compared to crystalline Si, and more than 25 …
Continue reading at tsukuba.repo.nii.ac.jp (PDF) (other versions)

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