[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Li et al., 2022 - Google Patents

A 24-30 GHz Balanced PA With High Linearity for mm-Wave 5G in 130 nm SiGe BiCMOS

Li et al., 2022

Document ID
8341317548662494567
Author
Li Z
Chen J
Hou D
Wang L
Xiang Y
Publication year
Publication venue
2022 IEEE MTT-S International Wireless Symposium (IWS)

External Links

Snippet

In this paper, a balanced power amplifier (PA) which was fabricated in a 130 nm SiGe BiCMOS technology is presented for millimeter-wave (mm-wave) fifth generation (5G) application. In the phase array systems, the impedance of the antenna varies as the beam …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0261Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0277Selecting one or more amplifiers from a plurality of amplifiers
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0288Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0294Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using vector summing of two or more constant amplitude phase-modulated signals
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/602Combinations of several amplifiers
    • H03F3/604Combinations of several amplifiers using FET's
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/191Tuned amplifiers
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/204A hybrid coupler being used at the output of an amplifier circuit
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/387A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56Modifications of input or output impedances, not otherwise provided for
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/372Noise reduction and elimination in amplifier
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00Coupling devices of the waveguide type
    • H01P5/12Coupling devices having more than two ports
    • H01P5/16Conjugate devices, i.e. devices having at least one port decoupled from one other port
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01QAERIALS
    • H01Q23/00Aerials with active circuits or circuit elements integrated within them or attached to them

Similar Documents

Publication Publication Date Title
EP1763921B1 (en) Integrated doherty type amplifier arrangement with high power efficiency
Li et al. A 24–30-GHz TRX front-end with high linearity and load-variation insensitivity for mm-wave 5G in 0.13-μm SiGe BiCMOS
Fan et al. A broadband transformer-based power amplifier achieving 24.5-dBm output power over 24–41 GHz in 65-nm CMOS process
Lee et al. A 24–30 GHz 31.7% fractional bandwidth power amplifier with an adaptive capacitance linearizer
Kim et al. A Switchless, $ Q $-Band Bidirectional Transceiver in 0.12-$\mu $ m SiGe BiCMOS Technology
Pashaeifar et al. 14.4 A 24-to-30GHz double-quadrature direct-upconversion transmitter with mutual-coupling-resilient series-Doherty balanced PA for 5G MIMO arrays
CN112543002A (en) Broadband differential Doherty power amplifier and design method and application thereof
Zhou et al. Broadband highly efficient Doherty power amplifiers
Alhamed et al. A global multi-standard/multi-band 17.1-52.4 GHz Tx phased array beamformer with 14.8 dBm OP1dB supporting 5G NR FR2 bands with multi-Gb/s 64-QAM for massive MIMO arrays
Malmqvist et al. A W-band single-chip receiver in a 60 nm GaN-on-silicon foundry process
Pashaeifar et al. A 24-to-32GHz series-Doherty PA with two-step impedance inverting power combiner achieving 20.4 dBm P sat and 38%/34% PAE at P sat/6dB PBO for 5G applications
Li et al. A 24-30 GHz Balanced PA With High Linearity for mm-Wave 5G in 130 nm SiGe BiCMOS
Sarkar et al. A power-efficient 4-element beamformer in 120-nm SiGe BiCMOS for 28-GHz cellular communications
Esmael et al. A 19-43 GHz linear power amplifier in 28nm bulk CMOS for 5G phased array
Pashaeifar et al. 32.7 A 25.2 dBm P SAT, 35-to-43GHz VSWR-Resilient Chain-Weaver Eight-Way Balanced PA with an Embedded Impedance/Power Sensor
Zhu et al. A Packaged 90-to-96GHz 16-Element Phased Array with 18.8/15.8 dBm Psat/OP1dB, 14.8% TX PAE in 65nm CMOS Process and+ 51dBm Array EIRP
Hanna et al. A wideband highly efficient class-J integrated power amplifier for 5G applications
Öjefors et al. An 8-way power-combining E-band amplifier in a SiGe HBT technology
Ding et al. A 23 G Hz RF-beamforming Transmitter with> 15.5 dBm $\mathrm {P} _ {\text {sat}} $ and> 21.7% Peak Efficiency for Inter-satellite Communications
Sahlabadi et al. A Compact, High Tuning Accuracy and Enhanced Linearity 37-43 GHz Digitally-Controlled Vector Sum Phase Shifter
Wang et al. A 45 GHz Low-Voltage Cascode Power Amplifier Based on Capacitor Coupling Technology
Dettmann et al. Comparison of a single-ended class AB, a balance and a doherty power amplifier
Liu et al. A 60 GHz edge-coupled 4-way balun power amplifier with 22.7 dBm output power and 27.7% peak efficiency
Karnaty et al. Reconfigurable millimeter-wave power amplifiers in gan and soi using passive load modulation
Kantanen et al. Two-way vector modulator SiGe MMIC for millimeter-wave phased array applications