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Downey et al., 2014 - Google Patents

${\rm SiN} _ {x} $/InAlN/AlN/GaN MIS-HEMTs With 10.8${\rm THz}\cdot {\rm V} $ Johnson Figure of Merit

Downey et al., 2014

Document ID
7568508802423949709
Author
Downey B
Meyer D
Katzer D
Roussos J
Pan M
Gao X
Publication year
Publication venue
IEEE electron device letters

External Links

Snippet

A high combination of three-terminal breakdown voltage (VBK) and current gain cutoff frequency (f T) was achieved with SiN x/InAlN/AlN/GaN metal-insulator-semiconductor high- electron mobility transistors (MIS-HEMTs). A 1-nm SiN x gate dielectric was deposited ex situ …
Continue reading at ieeexplore.ieee.org (other versions)

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