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Song et al., 2015 - Google Patents

Ultralow-leakage AlGaN/GaN high electron mobility transistors on Si with non-alloyed regrown ohmic contacts

Song et al., 2015

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Document ID
4842299535950350242
Author
Song B
Zhu M
Hu Z
Qi M
Nomoto K
Yan X
Cao Y
Jena D
Xing H
Publication year
Publication venue
IEEE Electron Device Letters

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Snippet

Without employing gate dielectrics, AlGaN/GaN high-electron mobility transistors (HEMTs) on Si with non-alloyed regrown ohmic contacts exhibit record-low leakage currents~ 10-12 A/mm, high ON/OFF current ratios 1011. Compared with HEMTs with conventional alloyed …
Continue reading at djena.engineering.cornell.edu (PDF) (other versions)

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