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于英霞 et al., 2013 - Google Patents

Electron mobility in the linear region of an AlGaN/AlN/GaN heterostructure field-effect transistor

于英霞 et al., 2013

Document ID
7353762764983594349
Author
于英霞
林兆军
栾崇彪
王玉堂
陈弘
王占国
Publication year
Publication venue
中国物理 B: 英文版

External Links

Continue reading at scholar.google.com (other versions)

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