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Bai et al., 2017 - Google Patents

Design of high performance normally-off dual junction gate AlGaN/GaN heterostructure field effect transistors for high voltage application

Bai et al., 2017

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Document ID
13296586245849853525
Author
Bai Z
Du J
Jiang Z
Yu Q
Publication year
Publication venue
Journal of Computational Electronics

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Snippet

In this paper, a novel normally-off dual junction gate AlGaN/GaN heterostructure field effect transistor (DJG-HFET) is proposed for reducing on-resistance, decreasing the subthreshold swing, enhancing threshold voltage and improving the breakdown voltage. The proposed …
Continue reading at www.researchgate.net (PDF) (other versions)

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