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Xue et al., 2011 - Google Patents

In0. 7Ga0. 3 as Tunneling Field-Effect-Transistors with LaAlO3 and ZrO2 High-k Dielectrics

Xue et al., 2011

Document ID
7197287756303390286
Author
Xue F
Zhao H
Chen Y
Wang Y
Zhou F
Lee J
Publication year
Publication venue
ECS Transactions

External Links

Snippet

We investigated the device structure and fabrication process of In0. 7Ga0. 3As tunneling field-effect-transistors (TFETs) with atomiclayer-deposited (ALD) high-k dielectrics. We compared the device performance of In0. 7Ga0. 3As TFETs with p++/i and p++/n+ tunneling …
Continue reading at iopscience.iop.org (other versions)

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