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Kim et al., 2021 - Google Patents

Impact of Sulfur Passivation on Carrier Transport Properties of In 0.7 Ga 0.3 As Quantum-Well MOSFETs

Kim et al., 2021

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Document ID
5545506739673840808
Author
Kim J
Jo H
Lee I
Kim T
Kim D
Publication year
Publication venue
IEEE Journal of the Electron Devices Society

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Snippet

We investigated the impact of a sulfur passivation (S-passivation) process step on carrier transport properties of surface-channel In 0.7 Ga 0.3 As quantum-well (QW) Metal-Oxide- Semiconductor Field-Effect-Transistors (MOSFETs) with source/drain (S/D) regrowth …
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