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Deng et al., 2012 - Google Patents

Fabrication characteristics of 1.2 kV SiC junction barrier schottky rectifiers with etched implant junction termination extension

Deng et al., 2012

Document ID
7064115000283845428
Author
Deng X
Yang F
Sun H
Rao C
Wang Y
Wu H
Zhang B
Publication year
Publication venue
2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology

External Links

Snippet

An etched implanted junction termination extension (JTE) is presented for high-voltage 4H- SiC JBS rectifiers. Unlike the conventional JTE structure, the proposed structure utilizes multiple etching steps to achieve the optimum JTE concentration range. Experimental and …
Continue reading at ieeexplore.ieee.org (other versions)

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