CN105226104B - A kind of SiC schottky diode and preparation method thereof - Google Patents
A kind of SiC schottky diode and preparation method thereof Download PDFInfo
- Publication number
- CN105226104B CN105226104B CN201510737969.1A CN201510737969A CN105226104B CN 105226104 B CN105226104 B CN 105226104B CN 201510737969 A CN201510737969 A CN 201510737969A CN 105226104 B CN105226104 B CN 105226104B
- Authority
- CN
- China
- Prior art keywords
- diode
- layer
- anode
- epitaxial layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 84
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 52
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 50
- 238000000034 method Methods 0.000 claims description 42
- 238000009826 distribution Methods 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 238000005457 optimization Methods 0.000 claims description 11
- 239000002245 particle Substances 0.000 claims description 11
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 230000007423 decrease Effects 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 239000002019 doping agent Substances 0.000 abstract description 5
- 229910052751 metal Inorganic materials 0.000 description 18
- 239000002184 metal Substances 0.000 description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 239000000463 material Substances 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000001755 magnetron sputter deposition Methods 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000004364 calculation method Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 230000005641 tunneling Effects 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 241000209094 Oryza Species 0.000 description 2
- 235000007164 Oryza sativa Nutrition 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical group [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 235000009566 rice Nutrition 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 235000013339 cereals Nutrition 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
This application discloses a kind of SiC schottky diodes and preparation method thereof, wherein the diode includes：First doping type silicon carbide substrates；Cathode positioned at the one side of substrate；Deviate from the epitaxial layer of the cathode side positioned at the substrate；Positioned at the anode of the epi-layer surface；The doping concentration of the epitaxial layer is gradually increased by the anode boundary to the substrate boundary.For the epitaxial layer of the diode, high-dopant concentration advantageously reduces the conducting resistance of the diode, and low doping concentration is conducive to be promoted the voltage endurance capability of the diode.And inventor, the study found that when the diode is in reverse-biased, built in field intensity is gradually weakened by anode boundary to the substrate boundary of the diode.Therefore the diode can be reduced into forward conduction resistance, and then reduce its conduction voltage drop and overall power consumption under the premise of keeping voltage endurance capability constant.
Description
Technical field
The present invention relates to field of semiconductor devices, more specifically to a kind of SiC schottky diode and its system
Preparation Method.
Background technique
Schottky diode (Schottky diode, SBD) has many advantages, such as that forward voltage drop is low, reverse recovery time is short.
And carbofrax material with the features such as its broad stopband width, high saturated electrons drift rate as the preferred material for preparing Schottky diode
Material, SiC schottky diode have the characteristics that high shutdown voltage, low reverse current leakage, low switching losses, become high frequency with
The ideal component of high-speed switch.
Power consumption PF=I for SiC schottky diode, under forward conduction stateF*VFTribute to overall power consumption
Offer maximum.Due to the electric current I of SiC schottky diodeFIt is to be predetermined by its application mode, therefore reduce silicon carbide
The power consumption of Schottky diode can only be by reducing its forward voltage drop VFTo realize.Existing SiC schottky diode is being protected
It is constant to demonstrate,prove its reverse BV, that is, under conditions of guaranteeing that its voltage endurance capability is constant, forward voltage drop VFIt is difficult to reduce, therefore its
Overall power consumption is also difficult to reduce.
Summary of the invention
The embodiment of the invention provides a kind of SiC schottky diode, the diode is with low forward voltage drop and always
Body power consumption.
A kind of SiC schottky diode, including：
First doping type silicon carbide substrates；
Cathode positioned at the one side of substrate；
Deviate from the epitaxial layer of the cathode side positioned at the substrate；
Positioned at the anode of the epi-layer surface；
The doping concentration of the epitaxial layer is gradually increased by the anode boundary to the substrate boundary.
Preferably, the distribution mode of the doping concentration of the epitaxial layer is linear distribution or the distribution of remaining error or Gauss point
Cloth.
Preferably, the diode further includes：
The interface of multiple second doping types inside the epi-layer surface.
Preferably, the diode further includes：
The junction termination technique area of interface two sides internal positioned at the epi-layer surface, the multiple.
Preferably, the diode further includes：
Terminal passivating floor positioned at the epi-layer surface, the covering junction termination technique area.
Preferably, the terminal passivating layer is silicon dioxide layer or silicon nitride layer.
A kind of preparation method of SiC schottky diode, including：
The silicon carbide substrates of first doping type are provided；
In the one side of substrate grown epitaxial layer, the doping concentration of the epitaxial layer is by the substrate boundary to the extension
Layer surface gradually decreases；
The anode of the diode is formed in the epi-layer surface；
The cathode of the diode is formed away from the epitaxial layer side in the substrate.
Preferably, after the one side of substrate grown epitaxial layer, the diode is formed in the epi-layer surface
Further include before anode：
The particle of the second doping type is injected in the epi-layer surface, forms multiple interfaces in its interior surface.
Preferably, after the one side of substrate grown epitaxial layer, the diode is formed in the epi-layer surface
Further include before anode：
The particle of the second doping type is injected in the epi-layer surface, is formed in its interior surface and is located at the multiple knot
The junction termination technique area of area two sides.
Preferably, the particle that the second doping type is injected in the epi-layer surface forms in its interior surface and is located at institute
After the junction termination technique area for stating multiple interface two sides, also wrapped before the anode that the epi-layer surface forms the diode
It includes：
Terminal passivating layer is formed in the epi-layer surface；
The terminal passivating floor covers the junction termination technique area.
Preferably, further include after the anode that the epi-layer surface forms the diode：
Anode's optimization layer is formed in the anode surface.
Preferably, the anode's optimization layer is aluminum metal layer.
The embodiment of the invention provides a kind of SiC schottky diodes and preparation method thereof, wherein the diode
The doping concentration of epitaxial layer gradually increased by the anode boundary to the substrate boundary.For the epitaxial layer of the diode
For, high-dopant concentration advantageously reduces the conducting resistance of the diode, and low doping concentration is conducive to promote the diode
Voltage endurance capability.And inventor is the study found that when SiC schottky diode is in reverse-biased, due to backward voltage
In the presence of so that its epitaxial layer generates built in field, the built in field intensity is by the anode boundary of the diode to the substrate
Gradually weaken on boundary.Therefore the doping concentration of the epitaxial layer is gradually risen by the anode boundary to the substrate boundary can
To reduce its forward conduction resistance under the premise of the voltage endurance capability of the holding diode is constant, and then reduce its conducting pressure
Drop and overall power consumption.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is a kind of SiC schottky diode that one embodiment of the present of invention provides；
Fig. 2 be another embodiment of the present invention provides a kind of SiC schottky diode；
Fig. 3 is a kind of preparation method flow chart for SiC schottky diode that one embodiment of the present of invention provides；
Fig. 4 be another embodiment of the present invention provides a kind of SiC schottky diode preparation method process
Figure；
Fig. 5-9 is the device of the SiC schottky diode that provides of a specific embodiment of the invention during the preparation process
Part sectional structure chart.
Specific embodiment
As described in background, the forward voltage drop of SiC schottky diode in the prior art is higher, totality
Power consumption is also higher.
In view of this, the embodiment of the invention provides a kind of SiC schottky diodes, including：
First doping type silicon carbide substrates；
Cathode positioned at the one side of substrate；
Deviate from the epitaxial layer of the cathode side positioned at the substrate；
Positioned at the anode of the epi-layer surface；
The doping concentration of the epitaxial layer is gradually increased by the anode boundary to the substrate boundary.
Correspondingly, the embodiment of the invention also provides a kind of preparation methods of SiC schottky diode, including：
The silicon carbide substrates of first doping type are provided；
In the one side of substrate grown epitaxial layer, the doping concentration of the epitaxial layer is by the substrate boundary to the extension
Layer surface gradually decreases；
The anode of the diode is formed in the epi-layer surface；
The cathode of the diode is formed away from the epitaxial layer side in the substrate.
A kind of SiC schottky diode provided in an embodiment of the present invention and preparation method thereof, wherein the diode
The doping concentration of epitaxial layer gradually increased by the anode boundary to the substrate boundary.For the epitaxial layer of the diode
For, high-dopant concentration advantageously reduces the conducting resistance of the diode, and low doping concentration is conducive to promote the diode
Voltage endurance capability.And inventor is the study found that when SiC schottky diode is in reverse-biased, due to backward voltage
In the presence of so that its epitaxial layer generates built in field, the built in field intensity is by the anode boundary of the diode to the substrate
Gradually weaken on boundary.Therefore the doping concentration of the epitaxial layer is gradually risen by the anode boundary to the substrate boundary can
To reduce its forward conduction resistance under the premise of the voltage endurance capability of the holding diode is constant, and then reduce its conducting pressure
Drop and overall power consumption.
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
The embodiment of the invention provides a kind of SiC schottky diodes, as shown in Figure 1, including：
First doping type silicon carbide substrates 100；
Cathode 400 positioned at 100 side of substrate；
Deviate from the epitaxial layer 200 of 400 side of cathode positioned at the substrate 100；
Anode 300 positioned at 200 surface of epitaxial layer；
The doping concentration of the epitaxial layer 200 is gradually increased by 300 boundary of anode to 100 boundary of substrate.
It should be noted that in the present embodiment, the substrate 100 is 4H- silicon carbide substrates 100.In its of the invention
In his embodiment, the crystalline form of the substrate 100 includes but is not limited to 4H, 6H, 3C.The present invention is to this and without limitation, specific to regard
Depending on actual conditions.
It should also be noted that, in the present embodiment, the value range of the conductivity of the substrate 100 is 10 milliohms li
- 30 milliohms centimetre of rice, including endpoint value.The value range of the thickness of the substrate 100 is 200 microns -500 microns, including
Endpoint value.But the present invention is to the conductivity of the substrate 100 and the value range of thickness and specific value and without limitation, specifically
Depending on actual conditions.
In the present embodiment, the anode 300 is formed by metal, and the metal for forming the anode 300 includes but is not limited to
Titanium, nickel, gold, silver.The present invention to the metal species for forming the anode 300 and without limitation, as long as the work function of metal is greater than
The work function of the substrate 100, specifically depending on actual conditions.
In the present embodiment, the cathode 400 is formed by metal, and the metal for forming the cathode 400 includes but is not limited to
Nickel.The present invention to the metal species for forming the cathode 400 and without limitation, as long as can be with the substrate 100 formation ohm
Contact, specifically depending on actual conditions.
On the basis of the above embodiments, in one embodiment of the invention, the doping concentration of the epitaxial layer 200
Distribution mode is linear distribution or the distribution of remaining error or Gaussian Profile.Point of the present invention to the doping concentration of the epitaxial layer 200
Mode for cloth and without limitation, as long as the doping concentration of the epitaxial layer 200 can be made by 300 boundary of anode to the substrate
100 boundaries gradually increase, specifically depending on actual conditions.It should be noted that due to linear distribution, remaining error distribution and
The form of Gaussian Profile has been well known to those skilled in the art, and this will not be repeated here by the present invention.
It should also be noted that, the resistance of epitaxial layer 200 is device on-resistance for SiC schottky diode
Important component, therefore the resistance for reducing the epitaxial layer 200 is the key that reduce device on-resistance.The epitaxial layer
The calculation formula of 200 conductivity is：
σ=nq μn； (1)
Wherein n is carrier concentration, i.e., the doping concentration of the described epitaxial layer 200, μnFor carrier mobility；
The calculation formula of the resistance of the epitaxial layer 200 is：
R=d/ σ S； (2)
Wherein, d is the thickness of the epitaxial layer 200, and σ is the conductivity of the epitaxial layer 200, and S is the conducting face of device
Product；In conjunction with formula (1) and formula (2) as can be seen that the resistance of the diode epitaxial layer 200 and its doping concentration are in inverse ratio,
That is the doping concentration of epitaxial layer 200 is higher, and resistance is smaller；And inventor is the study found that at SiC schottky diode
When reverse-biased, due to the presence of backward voltage make its epitaxial layer 200 generate built in field, the built in field intensity by
Gradually weaken on 300 boundary of anode of the diode to 100 boundary of substrate.Therefore the doping of the epitaxial layer 200 is dense
Degree is gradually risen by 300 boundary of anode to 100 boundary of substrate to keep the voltage endurance capability of the diode not
Under the premise of change, its forward conduction resistance is reduced, and then reduce its conduction voltage drop and overall power consumption.
On the basis of the above embodiments, in a preferred embodiment of the invention, as shown in Fig. 2, the diode
Further include：
Positioned at the interface 500 of multiple second doping types of 200 interior surface of epitaxial layer.
By taking the SiC schottky diode of 1700V as an example, the depth in the interface 500 is 0.2 μm, and doping concentration is greater than
5E18cm-3.The present invention to this and without limitation, specifically depending on actual conditions.
It should be noted that the diode before introducing the interface 500 utilizes Schottky barrier to realize merely
The rectification characteristic of diode has good rectification characteristic under low current, low-voltage.But the voltage of Schottky barrier stops
Slice width degree is generally several nanometers, with the increase of backward voltage, is easy to happen tunneling effect and limits the performance of diode.Institute
The introducing for stating interface 500 can make the diode utilize Schottky gesture under forward voltage and lesser backward voltage
Build, under higher backward voltage using in laterally PN junction depletion region interconnected as the potential barrier of decision breakdown reverse voltage
The generation of tunneling effect is prevented on barrier layer.
On the basis of the above embodiments, in another embodiment of the present invention, first doping type is N-type,
Second doping type is p-type；But in other embodiments of the invention, first doping type is p-type, the second doping type
For N-type.The present invention to this and without limitation, specifically depending on actual conditions.
On the basis of the above embodiments, in another preferred embodiment of the invention, the diode further includes：
Positioned at the junction termination technique area of 200 interior surface of epitaxial layer, 500 two sides of the multiple interface.
It should be noted that the doping type in the junction termination technique area is different from the doping type of the substrate 100.
It should also be noted that, electric field tends in diode Xiao when the backward voltage of the diode increases
The periphery building of Te Ji contact.When electric field increases, reverse leakage current increases, and breakdown reverse voltage reduces, and when super
The ability of control avalanche current reduces when crossing breakdown voltage.And the purpose that the junction termination technique area introduces is to reduce by two pole
The electric field concentration effect at 300 edge of tube anode, to solve the above problems.In the present embodiment, the junction termination technique area
Doping concentration close to described 500 one end of interface to away from described 500 one end of interface from gradually decreasing.But the present invention is whole to the knot
The concrete form for holding protection zone can be the form that field plate and protection ring combine, or other forms, tool without limitation
Depending on stereoscopic actual conditions.
On the basis of the above embodiments, in yet another embodiment of the present invention, the diode further includes：
Terminal passivating floor positioned at 200 surface of epitaxial layer, the covering junction termination technique area.
As long as the present invention is to described it should be noted that the terminal passivating floor covers the terminal protection area
The specific overlay area of terminal passivating layer and without limitation, specifically depending on actual conditions.The terminal passivating layer is to described outer
Prolong the covering on 200 surface of layer so that the interface 500 is not influenced by extraneous water oxygen and impurity, is mentioned for the multiple interface 500
It is protected for performance；Simultaneously because the dielectric constant of the terminal passivating layer is higher than air, therefore certain thickness terminal passivating layer
The voltage endurance capability between the interface 500 and the anode 300 can be promoted.
On the basis of the above embodiments, in yet another embodiment of the present invention, the terminal passivating layer is titanium dioxide
Silicon layer or silicon nitride layer, but the present invention is to the specific forming material of the terminal passivating layer and without limitation, the specific practical feelings of view
Depending on condition.
It should be noted that in the present embodiment, the silicon dioxide layer passes through plasma enhanced vapor deposition method shape
At with a thickness of 1 μm.But the present invention is to the forming method of the silicon dioxide layer and specific thickness and without limitation, specific to regard
Depending on actual conditions.
On the basis of the above embodiments, in one particular embodiment of the present invention, the thickness of the epitaxial layer 200
Value range is 14 μm -18 μm, including endpoint value.The present invention to the specific value of 200 thickness of epitaxial layer and without limitation,
Specifically depending on actual conditions.
It should be noted that by taking the SiC schottky diode of 1700V grade as an example, 200 anode 300 of epitaxial layer
The value range of the doping concentration of boundary is 3E15cm-3-8E15cm-3, including endpoint value.200 substrate 100 of epitaxial layer
The value range of the doping concentration of boundary is 8E15cm-3-2E16cm-3, including endpoint value.But the present invention does not limit this
It is fixed, specifically determined by the thickness and manufacture craft of the epitaxial layer 200.
On the basis of the above embodiments, in another preferred embodiment of the invention, the diode further includes：
Deviate from the anode's optimization layer of 200 side of epitaxial layer positioned at the anode 300.
The anode's optimization layer is formed by metal, and the thickness by increasing anode 300, which is realized, reduces the diode Xiao Te
The electrical contact resistance of base contact.
In the present embodiment, the anode's optimization layer is aluminum metal layer, with a thickness of 4 μm.The present invention is excellent to the anode
Change the specific forming material and thickness and without limitation of layer, it is specific depending on actual conditions.
In conclusion the embodiment of the invention provides a kind of SiC schottky diode, the epitaxial layer of the diode
200 doping concentration is gradually increased by 300 boundary of anode to 100 boundary of substrate.For the extension of the diode
For layer 200, high-dopant concentration advantageously reduces the conducting resistance of the diode, and low doping concentration is conducive to promote described two
The voltage endurance capability of pole pipe.And inventor is the study found that when SiC schottky diode is in reverse-biased, due to reversed electricity
The presence of pressure make its epitaxial layer 200 generate built in field, the built in field intensity by the diode 300 boundary of anode
Gradually weaken to 100 boundary of substrate.Therefore by the doping concentration of the epitaxial layer 200 by 300 boundary of anode to institute
It states 100 boundary of substrate and gradually rises and can reduce its positive guide under the premise of the voltage endurance capability of the holding diode is constant
Be powered resistance, and then reduces its conduction voltage drop and overall power consumption.
Correspondingly, the embodiment of the invention also provides a kind of preparation method of SiC schottky diode, such as Fig. 3 institute
Show, including：
S101：The silicon carbide substrates 100 of first doping type are provided.
It should be noted that in embodiment, the substrate 100 is 4H- silicon carbide substrates 100.In other of the invention
In embodiment, the crystalline form of the substrate 100 includes but is not limited to 4H, 6H, 3C.To this and without limitation, specific view is real by the present invention
Depending on the situation of border.
It should also be noted that, in the present embodiment, the value range of the conductivity of the substrate 100 is 10 milliohms li
- 30 milliohms centimetre of rice, including endpoint value.The value range of the thickness of the substrate 100 is 200 microns -500 microns, including
Endpoint value.But the present invention is to the conductivity of the substrate 100 and the value range of thickness and specific value and without limitation, specifically
Depending on actual conditions.
S102：In the 100 side grown epitaxial layer 200 of substrate, the doping concentration of the epitaxial layer 200 is by the substrate
100 boundaries to 200 surface of epitaxial layer gradually decreases.
It should be noted that the epitaxial layer 200 is grown using growth technology, the growth technology include but
It is not limited to vapor phase epitaxial growth technology and molecular beam epitaxial growth technology.The present invention to this and without limitation, the specific practical feelings of view
Depending on condition.
It should also be noted that, in the present embodiment, the doping of the epitaxial layer 200 carries out simultaneously with epitaxial growth.?
In the other embodiment of the present invention, pass through grain after the epitaxial growth for being entrained in the epitaxial layer 200 of the epitaxial layer 200
The mode of son injection is completed.The present invention to this and without limitation, specifically depending on actual conditions.
On the basis of the above embodiments, in one particular embodiment of the present invention, the doping of the epitaxial layer 200 is dense
The distribution mode of degree is linear distribution or the distribution of remaining error or Gaussian Profile.Doping concentration of the present invention to the epitaxial layer 200
Distribution mode and without limitation, as long as can make the doping concentration of the epitaxial layer 200 by 100 boundary of substrate to described
200 surface of epitaxial layer gradually decreases, specifically depending on actual conditions.It should be noted that due to linear distribution, remaining error
The form of distribution and Gaussian Profile has been well known to those skilled in the art, and this will not be repeated here by the present invention.
It should also be noted that, the resistance of epitaxial layer 200 is device on-resistance for SiC schottky diode
Important component, therefore the resistance for reducing the epitaxial layer 200 is the key that reduce device on-resistance.The epitaxial layer
The calculation formula of 200 conductivity is：
σ=nq μn； (1)
Wherein n is carrier concentration, i.e., the doping concentration of the described epitaxial layer 200, μnFor carrier mobility；
The calculation formula of the resistance of the epitaxial layer 200 is：
R=d/ σ S； (2)
Wherein, d is the thickness of the epitaxial layer 200, and σ is the conductivity of the epitaxial layer 200, and S is the conducting face of device
Product；In conjunction with formula (1) and formula (2) as can be seen that the resistance of the diode epitaxial layer 200 and its doping concentration are in inverse ratio,
That is the doping concentration of epitaxial layer 200 is higher, and resistance is smaller；And inventor is the study found that at SiC schottky diode
When reverse-biased, due to the presence of backward voltage make its epitaxial layer 200 generate built in field, the built in field intensity by
Gradually weaken on 300 boundary of anode of the diode to 100 boundary of substrate.Therefore the doping of the epitaxial layer 200 is dense
Degree is gradually risen by 300 boundary of anode to 100 boundary of substrate to keep the voltage endurance capability of the diode not
Under the premise of change, its forward conduction resistance is reduced, and then reduce its conduction voltage drop and overall power consumption.
On the basis of the above embodiments, in another specific embodiment of the invention, the thickness of the epitaxial layer 200
Value range be 14 μm -18 μm, including endpoint value.The present invention does not limit the specific value of 200 thickness of epitaxial layer
It is fixed, specifically depending on actual conditions.
It should be noted that by taking the SiC schottky diode of 1700V grade as an example, 200 anode 300 of epitaxial layer
The value range of the doping concentration of boundary is 3E15cm-3-8E15cm-3, including endpoint value.200 substrate 100 of epitaxial layer
The value range of the doping concentration of boundary is 8E15cm-3-2E16cm-3, including endpoint value.But the present invention does not limit this
It is fixed, specifically determined by the thickness and manufacture craft of the epitaxial layer 200.
S103：The anode 300 of the diode is formed on 200 surface of epitaxial layer.
In the present embodiment, the anode 300 is formed by metal, and the metal for forming the anode 300 includes but is not limited to
Titanium, nickel, gold, silver.The present invention to the metal species for forming the anode 300 and without limitation, as long as the work function of metal is greater than
The work function of the substrate 100, specifically depending on actual conditions.
It should be noted that in the present embodiment, the anode 300 passes through magnetron sputtering technique or thermal evaporation process shape
To its specific formation process and without limitation at, the present invention, specifically depending on actual conditions.
S104：The cathode 400 of the diode is formed away from 200 side of epitaxial layer in the substrate 100.
In the present embodiment, the cathode 400 is formed by metal, and the metal for forming the cathode 400 includes but is not limited to
Nickel.The present invention to the metal species for forming the cathode 400 and without limitation, as long as can be with the substrate 100 formation ohm
Contact, specifically depending on actual conditions.
It should be noted that in the present embodiment, the cathode 400 passes through magnetron sputtering technique or thermal evaporation process shape
To its specific formation process and without limitation at, the present invention, specifically depending on actual conditions.
On the basis of the above embodiments, in a preferred embodiment of the invention, it is grown in 100 side of substrate
After epitaxial layer 200, further include before the anode 300 that 200 surface of epitaxial layer forms the diode：
The particle of the second doping type is injected on 200 surface of epitaxial layer, forms multiple interfaces in its interior surface
500。
By taking the SiC schottky diode of 1700V as an example, the depth in the interface 500 is 0.2 μm, and doping concentration is greater than
5E18cm-3.The present invention to this and without limitation, specifically depending on actual conditions.
It should be noted that the interface 500 is realized by particle injection technology, the present invention to this and without limitation, tool
Depending on stereoscopic actual conditions.The diode before introducing the interface 500 utilizes merely Schottky barrier to realize two poles
The rectification characteristic of pipe has good rectification characteristic under low current, low-voltage.But the voltage blocking layer of Schottky barrier is wide
Degree is generally several nanometers, with the increase of backward voltage, is easy to happen tunneling effect and limits the performance of diode.The knot
The introducing in area 500 can make the diode utilize Schottky barrier under forward voltage and lesser backward voltage,
Stop using in laterally PN junction depletion region interconnected as the potential barrier for determining breakdown reverse voltage under higher backward voltage
Layer, prevents the generation of tunneling effect.
On the basis of the above embodiments, in another embodiment of the present invention, first doping type is N-type,
Second doping type is p-type；But in other embodiments of the invention, first doping type is p-type, the second doping type
For N-type.The present invention to this and without limitation, specifically depending on actual conditions.
On the basis of the above embodiments, in a preferred embodiment of the invention, in the one side of substrate, growth is outer
After prolonging layer, further include before the anode that the epi-layer surface forms the diode：
The particle of the second doping type is injected on 200 surface of epitaxial layer, is formed in its interior surface positioned at described more
The junction termination technique area of a 500 two sides of interface.
It should be noted that electric field tends in the diode Xiao Te when the backward voltage of the diode increases
The periphery building of base contact.When electric field increases, reverse leakage current increases, and breakdown reverse voltage reduces, and works as and be more than
The ability that avalanche current is controlled when breakdown voltage reduces.And the purpose that the junction termination technique area introduces is to reduce the diode
The electric field concentration effect at 300 edge of anode, to solve the above problems.In the present embodiment, the junction termination technique area is mixed
Miscellaneous concentration close to described 500 one end of interface to away from described 500 one end of interface from gradually decreasing.But the present invention is to the knot terminal
The concrete form of protection zone can be the form of field plate and protection ring combination without limitation, or other forms, specifically
Depending on actual conditions.
On the basis of the above embodiments, in another preferred embodiment of the invention, on 200 surface of epitaxial layer
The particle for injecting the second doping type forms the junction termination technique area for being located at the multiple 500 two sides of interface in its interior surface
Later, further include before the anode 300 that 200 surface of epitaxial layer forms diode：
Terminal passivating layer is formed on 200 surface of epitaxial layer；
The terminal passivating floor covers the junction termination technique area.
As long as the present invention is to institute it should be noted that the terminal passivating floor covers the junction termination technique area
The specific overlay area of terminal passivating layer and without limitation is stated, specifically depending on actual conditions.The terminal passivating layer is to described
The covering on 200 surface of epitaxial layer is not so that the interface 500 is influenced by extraneous water oxygen and impurity, for the multiple interface 500
Performance protection is provided；Simultaneously because the dielectric constant of the terminal passivating layer is higher than air, therefore certain thickness terminal passivating
Layer can promote the voltage endurance capability between the interface 500 and the anode 300.
On the basis of the above embodiments, in yet another embodiment of the present invention, the terminal passivating layer is titanium dioxide
Silicon layer or silicon nitride layer, but the present invention is to the specific forming material of the terminal passivating layer and without limitation, the specific practical feelings of view
Depending on condition.
It should be noted that in the present embodiment, the silicon dioxide layer passes through plasma enhanced vapor deposition method shape
At with a thickness of 1 μm.But the present invention is to the forming method of the silicon dioxide layer and specific thickness and without limitation, specific to regard
Depending on actual conditions.
On the basis of the above embodiments, in another preferred embodiment of the invention, on 200 surface of epitaxial layer
It is formed after the anode 300 of the diode and further includes：
Anode's optimization layer is formed on 300 surface of anode.
The anode's optimization layer is formed by metal, and the thickness by increasing anode 300, which is realized, reduces the diode Xiao Te
The electrical contact resistance of base contact.
In the present embodiment, the anode's optimization layer is aluminum metal layer, with a thickness of 4 μm.The present invention is excellent to the anode
Change the specific forming material and thickness and without limitation of layer, it is specific depending on actual conditions.
On the basis of the above embodiments, a particular preferred embodiment of the invention provides a kind of 1700V grade
The preparation method of SiC schottky diode, as shown in figure 4, including：
S201：N-type silicon carbide substrates 100 are provided；
S202：The epitaxial layer 200 for being 14 μm in the 100 surface growth thickness of substrate using vapor phase epitaxial growth, it is described
The doping concentration of epitaxial layer 200 is gradually decreased by 100 boundary of substrate to 200 surface of epitaxial layer, and step S202 is completed
Device profile structure chart afterwards is as shown in Figure 5；
S203：In the 200 surface injecting p-type particle of epitaxial layer, the interface 500 and junction termination technique area are formed, is walked
Device profile structure chart after the completion of rapid S203 is as shown in fig. 6, label 600 shown in Fig. 6 is the junction termination technique area；
S204：Magnetron sputtering method splash-proofing sputtering metal nickel is utilized away from 200 side of epitaxial layer in the substrate 100, is formed
The cathode 400 of the diode, the device profile structure chart after the completion of step S204 are as shown in Figure 7；
S205：1 μm of silica is grown using plasma reinforced chemical vapour deposition method on 200 surface of epitaxial layer
Layer, and wet etching is carried out to it, the terminal passivating layer is formed, the terminal passivating floor covers the junction termination technique area,
Device profile structure chart after the completion of step S205 is as shown in Figure 8；
S206：Titanium metal film is sputtered on 200 surface of epitaxial layer using magnetron sputtering method, the anode 300 is formed, walks
Device profile structure chart after the completion of rapid S207 is as shown in Figure 9；
S207：The aluminum metal layer of one layer of 4 μ m-thick is sputtered on 300 surface of anode using magnetron sputtering method, described in formation
Anode's optimization layer.
In conclusion the embodiment of the invention provides a kind of SiC schottky diodes and preparation method thereof, wherein institute
The doping concentration for stating the epitaxial layer 200 of diode is gradually increased by 300 boundary of anode to 100 boundary of substrate.For
For the epitaxial layer 200 of the diode, high-dopant concentration advantageously reduces the conducting resistance of the diode, low doping concentration
Be conducive to be promoted the voltage endurance capability of the diode.And inventor is the study found that when SiC schottky diode is in reverse-biased
When state, since the presence of backward voltage makes its epitaxial layer 200 generate built in field, the built in field intensity is by described two
Gradually weaken on 300 boundary of anode of pole pipe to 100 boundary of substrate.Therefore by the doping concentration of the epitaxial layer 200 by institute
Stating that 300 boundary of anode to 100 boundary of substrate gradually rises can be before the voltage endurance capability for keeping the diode be constant
It puts, reduces its forward conduction resistance, and then reduce its conduction voltage drop and overall power consumption.
Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with other
The difference of embodiment, the same or similar parts in each embodiment may refer to each other.For device disclosed in embodiment
For, since it is corresponded to the methods disclosed in the examples, so being described relatively simple, related place is said referring to method part
It is bright.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be readily apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest scope of cause.
Claims (12)
1. a kind of SiC schottky diode, which is characterized in that including：
First doping type silicon carbide substrates；
Cathode positioned at the one side of substrate；
Deviate from the epitaxial layer of the cathode side positioned at the substrate；
Positioned at the anode of the epi-layer surface；
The doping concentration of the epitaxial layer is gradually increased by the anode boundary to the substrate boundary.
2. diode according to claim 1, which is characterized in that the distribution mode of the doping concentration of the epitaxial layer is line
Property distribution or remaining error distribution or Gaussian Profile.
3. diode according to claim 1, which is characterized in that the diode further includes：
The interface of multiple second doping types inside the epi-layer surface.
4. diode according to claim 3, which is characterized in that the diode further includes：
The junction termination technique area of interface two sides internal positioned at the epi-layer surface, the multiple.
5. diode according to claim 4, which is characterized in that the diode further includes：
Terminal passivating floor positioned at the epi-layer surface, the covering junction termination technique area.
6. diode according to claim 5, which is characterized in that the terminal passivating layer is silicon dioxide layer or silicon nitride
Layer.
7. a kind of preparation method of SiC schottky diode, which is characterized in that including：
The silicon carbide substrates of first doping type are provided；
In the one side of substrate grown epitaxial layer, the doping concentration of the epitaxial layer is by the substrate boundary to the epitaxial layer table
Face gradually decreases；
The anode of the diode is formed in the epi-layer surface；
The cathode of the diode is formed away from the epitaxial layer side in the substrate.
8. preparation method according to claim 7, which is characterized in that after the one side of substrate grown epitaxial layer,
Further include before the anode that the epi-layer surface forms the diode：
The particle of the second doping type is injected in the epi-layer surface, forms multiple interfaces in its interior surface.
9. preparation method according to claim 8, which is characterized in that after the one side of substrate grown epitaxial layer,
Further include before the anode that the epi-layer surface forms the diode：
The particle of the second doping type is injected in the epi-layer surface, is formed in its interior surface and is located at the multiple interface two
The junction termination technique area of side.
10. preparation method according to claim 9, which is characterized in that in epi-layer surface injection the second doping class
The particle of type, after its interior surface forms the junction termination technique area for being located at the multiple interface two sides, in the epitaxial layer
Further include before the anode that surface forms the diode：
Terminal passivating layer is formed in the epi-layer surface；
The terminal passivating floor covers the junction termination technique area.
11. according to the described in any item preparation methods of claim 8-10, which is characterized in that form institute in the epi-layer surface
It states after the anode of diode and further includes：
Anode's optimization layer is formed in the anode surface.
12. preparation method according to claim 11, which is characterized in that the anode's optimization layer is aluminum metal layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510737969.1A CN105226104B (en) | 2015-11-03 | 2015-11-03 | A kind of SiC schottky diode and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510737969.1A CN105226104B (en) | 2015-11-03 | 2015-11-03 | A kind of SiC schottky diode and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105226104A CN105226104A (en) | 2016-01-06 |
| CN105226104B true CN105226104B (en) | 2018-11-30 |
Family
ID=54994942
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510737969.1A Active CN105226104B (en) | 2015-11-03 | 2015-11-03 | A kind of SiC schottky diode and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105226104B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106449775A (en) * | 2016-10-31 | 2017-02-22 | 复旦大学 | GaN-based hybrid PIN Schottky diode and production method thereof |
| CN108565294B (en) * | 2017-11-20 | 2021-01-19 | 中国电子科技集团公司第五十五研究所 | Epitaxial layer variable doping concentration silicon carbide diode and preparation method thereof |
| CN112713199B (en) * | 2019-10-25 | 2022-10-11 | 株洲中车时代电气股份有限公司 | Silicon carbide Schottky diode and preparation method thereof |
| CN117219679B (en) * | 2023-08-30 | 2024-05-07 | 海信家电集团股份有限公司 | Schottky diode |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003249664A (en) * | 2002-02-22 | 2003-09-05 | Seiko Instruments Inc | Schottky barrier diode |
| CN102832248A (en) * | 2012-09-10 | 2012-12-19 | 西安电子科技大学 | Silicon carbide MOSFET (metal-oxide-semiconductor field effect transistor) based on semi-super junction and manufacturing method |
| CN102842612A (en) * | 2012-09-11 | 2012-12-26 | 电子科技大学 | Insulated-gate bipolar transistor with embedded island structure |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4356767B2 (en) * | 2007-05-10 | 2009-11-04 | 株式会社デンソー | Silicon carbide semiconductor device having junction barrier Schottky diode |
| JP2009130266A (en) * | 2007-11-27 | 2009-06-11 | Toshiba Corp | Semiconductor substrate and semiconductor device, and method of manufacturing the same |
-
2015
- 2015-11-03 CN CN201510737969.1A patent/CN105226104B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003249664A (en) * | 2002-02-22 | 2003-09-05 | Seiko Instruments Inc | Schottky barrier diode |
| CN102832248A (en) * | 2012-09-10 | 2012-12-19 | 西安电子科技大学 | Silicon carbide MOSFET (metal-oxide-semiconductor field effect transistor) based on semi-super junction and manufacturing method |
| CN102842612A (en) * | 2012-09-11 | 2012-12-26 | 电子科技大学 | Insulated-gate bipolar transistor with embedded island structure |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105226104A (en) | 2016-01-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP2710635B1 (en) | Sic devices with high blocking voltage terminated by a negative bevel | |
| CN101794816B (en) | Semiconductor device | |
| CN109075214A (en) | Groove MOS type Schottky diode | |
| US10181532B2 (en) | Low loss electronic devices having increased doping for reduced resistance and methods of forming the same | |
| CN102544114B (en) | Accumulation type grooved-gate diode | |
| CN105226104B (en) | A kind of SiC schottky diode and preparation method thereof | |
| CN109742136A (en) | A kind of Schottky diode structure and its manufacturing method | |
| CN105810754B (en) | A kind of metal-oxide-semiconductor diode with accumulation layer | |
| CN105405895A (en) | Low-stored-charge high-recovery-speed diode chip | |
| CN102593154B (en) | Trench gate diode with P-type buried layer structure | |
| CN110459598A (en) | A kind of superjunction MOS type power semiconductor and preparation method thereof | |
| CN107978642A (en) | A kind of GaN base heterojunction diode and preparation method thereof | |
| CN108231911A (en) | High pressure resistant GaN base JBS diodes based on graded drift regions and preparation method thereof | |
| CN107393970B (en) | Silicon carbide junction barrier diode | |
| CN105590965B (en) | A kind of adjustable planar metal oxide semiconductor diode of cut-in voltage | |
| Ni et al. | SiC trench MOSFET with an integrated low von unipolar heterojunction diode | |
| KR101669987B1 (en) | SiC trench MOS barrier Schottky diode using tilt ion implantation and method for manufacturing thereof | |
| CN106158985A (en) | Silicon carbide junction barrier schottky diode and manufacturing method thereof | |
| WO2015064999A1 (en) | Junction barrier schottky diode and junction barrier schottky diode manufactured thereby | |
| WO2013119548A1 (en) | Sic devices with high blocking voltage terminated by a negative bevel | |
| CN111180528A (en) | Three-order inclined mesa junction terminal structure of SiC Schottky diode | |
| JP6816278B2 (en) | Power semiconductor device with floating field ring termination | |
| CN112242449B (en) | Based on SiC substrate slot type MPS diode cell structure | |
| CN210325811U (en) | Silicon carbide heterojunction diode power device | |
| CN108695396A (en) | A kind of diode and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: The age of 412001 in Hunan Province, Zhuzhou Shifeng District Road No. 169 Patentee after: ZHUZHOU CRRC TIMES ELECTRIC Co.,Ltd. Address before: The age of 412001 in Hunan Province, Zhuzhou Shifeng District Road No. 169 Patentee before: ZHUZHOU CSR TIMES ELECTRIC Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20201013 Address after: 412001 Room 309, floor 3, semiconductor third line office building, Tianxin hi tech park, Shifeng District, Zhuzhou City, Hunan Province Patentee after: Zhuzhou CRRC times Semiconductor Co.,Ltd. Address before: The age of 412001 in Hunan Province, Zhuzhou Shifeng District Road No. 169 Patentee before: ZHUZHOU CRRC TIMES ELECTRIC Co.,Ltd. |