[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Luo et al., 2022 - Google Patents

Thermoelectric performance of the 2D Bi2Si2Te6 semiconductor

Luo et al., 2022

View PDF
Document ID
6766577746571934209
Author
Luo Y
Ma Z
Hao S
Cai S
Luo Z
Wolverton C
Dravid V
Yang J
Yan Q
Kanatzidis M
Publication year
Publication venue
Journal of the American Chemical Society

External Links

Snippet

Bi2Si2Te6, a 2D compound, is a direct band gap semiconductor with an optical band gap of∼ 0.25 eV, and is a promising thermoelectric material. Single-phase Bi2Si2Te6 is prepared by a scalable ball-milling and annealing process, and the highly densified …
Continue reading at www.osti.gov (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/12—Selection of the material for the legs of the junction
    • H01L35/14—Selection of the material for the legs of the junction using inorganic compositions
    • H01L35/16—Selection of the material for the legs of the junction using inorganic compositions comprising tellurium or selenium or sulfur
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/28—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof operating with Peltier or Seebeck effect only
    • H01L35/32—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermo-couple forming the device including details about, e.g., housing, insulation, geometry, module
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/28—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof operating with Peltier or Seebeck effect only
    • H01L35/30—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof operating with Peltier or Seebeck effect only characterised by the heat-exchanging means at the junction
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/34—Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/02—Details
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Similar Documents

Publication Publication Date Title
Luo et al. Thermoelectric performance of the 2D Bi2Si2Te6 semiconductor
Luo et al. High thermoelectric performance in the new cubic semiconductor AgSnSbSe3 by high-entropy engineering
Chang et al. The thermoelectric properties of SnSe continue to surprise: extraordinary electron and phonon transport
Tan et al. Rationally designing high-performance bulk thermoelectric materials
Lee et al. Band convergence in thermoelectric materials: theoretical background and consideration on Bi–Sb–Te alloys
Shen et al. High-temperature structural and thermoelectric study of argyrodite Ag8GeSe6
Pei et al. Multiple converged conduction bands in K2Bi8Se13: a promising thermoelectric material with extremely low thermal conductivity
Li et al. Thermoelectric properties of Cu2SnSe4 with intrinsic vacancy
Hwang et al. Gigantic phonon-scattering cross section to enhance thermoelectric performance in bulk crystals
Jin et al. Fabrication and thermoelectric properties of single-crystal argyrodite Ag8SnSe6
Qiao et al. Tailoring nanoporous structures in Bi2Te3 thin films for improved thermoelectric performance
Kanatzidis Nanostructured thermoelectrics: the new paradigm?
Jin et al. Investigation on low-temperature thermoelectric properties of Ag2Se polycrystal fabricated by using zone-melting method
Wang et al. Thermoelectric performance of Sb2Te3-based alloys is improved by introducing PN junctions
Tang et al. Dopant induced impurity bands and carrier concentration control for thermoelectric enhancement in p-type Cr2Ge2Te6
Srinivasan et al. Impact of coinage metal insertion on the thermoelectric properties of GeTe solid-state solutions
Shu et al. Modification of bulk heterojunction and Cl doping for high-performance thermoelectric SnSe2/SnSe nanocomposites
Gao et al. Extraordinary thermoelectric performance realized in hierarchically structured AgSbSe2 with ultralow thermal conductivity
Shaabani et al. Thermoelectric performance of Na-doped GeSe
Liang et al. Realizing a high ZT of 1.6 in n-type Mg3Sb2-based Zintl compounds through Mn and Se codoping
Bhui et al. Ultralow thermal conductivity in earth-abundant Cu1. 6Bi4. 8S8: anharmonic rattling of interstitial Cu
Zhu et al. Intrinsically low lattice thermal conductivity in natural superlattice (Bi2) m (Bi2Te3) n thermoelectric materials
Wang et al. Aguilarite Ag4SSe thermoelectric material: natural mineral with low lattice thermal conductivity
Park et al. Achieving out-of-plane thermoelectric figure of merit ZT= 1.44 in a p-type Bi2Te3/Bi0. 5Sb1. 5Te3 superlattice film with low interfacial resistance
Cheng et al. Role of cation vacancies in Cu2SnSe3 Thermoelectrics