[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Cheng et al., 2019 - Google Patents

Role of cation vacancies in Cu2SnSe3 Thermoelectrics

Cheng et al., 2019

Document ID
2906153221625934959
Author
Cheng X
Li Z
You Y
Zhu T
Yan Y
Su X
Tang X
Publication year
Publication venue
ACS Applied Materials & Interfaces

External Links

Snippet

In this study, a series of Cu2–x SnSe3 (x= 0.075–0.175) and Cu2Sn1–y Se3 (y= 0.06–0.1) compounds were synthesized by self-propagating high-temperature synthesis combined with plasma-activated sintering. The effects of different cation vacancies (Cu vacancies and …
Continue reading at pubs.acs.org (other versions)

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/54—Material technologies
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/12—Selection of the material for the legs of the junction
    • H01L35/14—Selection of the material for the legs of the junction using inorganic compositions
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/28—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof operating with Peltier or Seebeck effect only
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/34—Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies or technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/50—Fuel cells

Similar Documents

Publication Publication Date Title
Cheng et al. Role of cation vacancies in Cu2SnSe3 Thermoelectrics
Wang et al. Fine tuning of defects enables high carrier mobility and enhanced thermoelectric performance of n-type PbTe
Hong et al. Establishing the golden range of Seebeck coefficient for maximizing thermoelectric performance
Wang et al. High porosity in nanostructured n-type Bi2Te3 obtaining ultralow lattice thermal conductivity
Wei et al. Achieving high thermoelectric figure of merit in polycrystalline SnSe via introducing Sn vacancies
Li et al. Thermoelectric properties of Cu2SnSe4 with intrinsic vacancy
Tippireddy et al. Oxychalcogenides as thermoelectric materials: an overview
Roychowdhury et al. Ultrahigh thermoelectric figure of merit and enhanced mechanical stability of p-type AgSb1–x Zn x Te2
Yue et al. Cu/Sb codoping for tuning carrier concentration and thermoelectric performance of GeTe-based alloys with ultralow lattice thermal conductivity
Xie et al. High Thermoelectric Performance in Chalcopyrite Cu1–x Ag x GaTe2–ZnTe: Nontrivial Band Structure and Dynamic Doping Effect
Wang et al. Ga-doping-induced carrier tuning and multiphase engineering in n-type PbTe with enhanced thermoelectric performance
Luo et al. Valence disproportionation of GeS in the PbS matrix forms Pb5Ge5S12 inclusions with conduction band alignment leading to high n-type thermoelectric performance
Zhou et al. Significant enhancement in the thermoelectric performance of aluminum-doped ZnO tuned by pore structure
Tang et al. Realizing high thermoelectric performance below phase transition temperature in polycrystalline snse via lattice anharmonicity strengthening and strain engineering
Lu et al. Boosting thermoelectric performance of SnSe via tailoring band structure, suppressing bipolar thermal conductivity, and introducing large mass fluctuation
Shu et al. Modification of bulk heterojunction and Cl doping for high-performance thermoelectric SnSe2/SnSe nanocomposites
Li et al. High thermoelectric performance of co-doped p-type polycrystalline SnSe via optimizing electrical transport properties
Wang et al. Aguilarite Ag4SSe thermoelectric material: natural mineral with low lattice thermal conductivity
Yin et al. Synergistically optimized electron and phonon transport of polycrystalline BiCuSeO via Pb and Yb Co-doping
Yang et al. Enhancing the thermoelectric performance of polycrystalline SnSe by decoupling electrical and thermal transport through carbon fiber incorporation
Liu et al. Surface chemistry and band engineering in AgSbSe2: toward high thermoelectric performance
Wang et al. Hierarchical structuring to break the amorphous limit of lattice thermal conductivity in high-performance SnTe-based thermoelectrics
Mehmood et al. Enhanced power factor and figure of merit of Cu2ZnSnSe4-based thermoelectric composites by Ag alloying
Feng et al. Ag interstitial inhibition and phonon scattering at the ZnSe nano-precipitates to enhance the thermoelectric performance of Ag2Se
Abbas et al. Achieving high thermoelectric performance of eco-friendly SnTe-based materials by selective alloying and defect modulation