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Weeber et al., 2005 - Google Patents

The fundamental properties of SiN/sub x: H that determine its passivating qualities

Weeber et al., 2005

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Document ID
6428802223500758126
Author
Weeber A
Rieffe H
Romijn I
Sinke W
Soppe W
Publication year
Publication venue
Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005.

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Snippet

Structural properties of SiN/sub x/: H layers deposited with N/sub 2/+ SiH/sub 4/and NH/sub 3/+ SiH/sub 4/are related to the passivation properties. It is shown that the Si-N bond density in the layers is an important parameter for the passivation of mc-Si solar cells. The best bulk …
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