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Ding et al., 2008 - Google Patents

Influence of annealing environment on the Hydrogen related bonding structure in silicon nitride thin films containing silicon nanoparticles

Ding et al., 2008

Document ID
10024271361639743177
Author
Ding W
Qi W
Lu W
Zhang Z
Yu W
Fu G
Publication year
Publication venue
Optoelectronic Materials and Devices III

External Links

Snippet

The Si-rich SiNx: H films have been prepared by helicon wave plasma-enhanced chemical vapor deposition (HWP-CVD) technique. Parts of the samples have been post-annealed at 800° C in the H 2, FG (10% H 2 in N 2), and N 2 ambient, respectively. Fourier transform …
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