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Chauhan et al., 2022 - Google Patents

Performance Analysis of HfO2 and Si3N4 Dielectrics in β-Ga2O3 HEMT

Chauhan et al., 2022

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Document ID
584229566817136983
Author
Chauhan M
Khan A
Tomar R
Jena K
Publication year
Publication venue
HEMT Technology and Applications

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Abstract β-Ga2O3 HEMT with 10 nm AlN as a barrier layer is designed in this paper. The dielectric layer of Si3N4 and HfO2 is introduced beneath the gate as a passivation layer. HfO2 shows high thermal stability and high reliability while Si3N4 shows good interface …
Continue reading at www.researchgate.net (PDF) (other versions)

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