Suchalkin et al., 2013 - Google Patents
Distributed feedback quantum cascade laser with optically tunable emission frequencySuchalkin et al., 2013
View PDF- Document ID
- 5769327991399822524
- Author
- Suchalkin S
- Belenky G
- Hosoda T
- Jung S
- Belkin M
- Publication year
- Publication venue
- Applied Physics Letters
External Links
Snippet
Continuous tuning of a room-temperature-operated distributed feedback quantum cascade laser in the range of 0.6 cm− 1 (20 GHz) was achieved using 1.3 μm telecom diode laser as a pumping source. We demonstrate wavelength modulation of the quantum cascade laser at …
- 238000005086 pumping 0 abstract description 28
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well, or supperlattice structures, e.g. single quantum well lasers (SQW lasers), multiple quantum well lasers (MQW lasers), graded index separate confinement hetrostructure lasers (GRINSCH lasers)
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feed-back lasers (DFB-lasers)
- H01S5/125—Distributed Bragg reflector lasers (DBR-lasers)
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Green et al. | Linewidth enhancement factor of terahertz quantum cascade lasers | |
Yang et al. | Hybrid optoelectronics: A polymer laser pumped by a nitride light-emitting diode | |
Friedli et al. | Four-wave mixing in a quantum cascade laser amplifier | |
Mi et al. | High-speed 1.3 μm tunnel injection quantum-dot lasers | |
Vassant et al. | Electrical modulation of emissivity | |
Fujita et al. | Terahertz generation in mid-infrared quantum cascade lasers with a dual-upper-state active region | |
Mori et al. | Low-switching-energy and high-repetition-frequency all-optical flip-flop operations of a polarization bistable vertical-cavity surface-emitting laser | |
Arsenijević et al. | Comparison of dynamic properties of ground-and excited-state emission in p-doped InAs/GaAs quantum-dot lasers | |
Schwarz et al. | High performance bi-functional quantum cascade laser and detector | |
Weih et al. | Single mode interband cascade lasers based on lateral metal gratings | |
Mangeney et al. | Continuous wave terahertz generation up to 2THz by photomixing on ion-irradiated In0. 53Ga0. 47As at 1.55 μm wavelengths | |
Deng et al. | Linewidth broadening factor of an interband cascade laser | |
Wan et al. | Temperature characteristics of epitaxially grown InAs quantum dot micro-disk lasers on silicon for on-chip light sources | |
Hempel et al. | Fast continuous tuning of terahertz quantum-cascade lasers by rear-facet illumination | |
Grillot et al. | A dual-mode quantum dot laser operating in the excited state | |
Didier et al. | Relative intensity noise and intrinsic properties of RF mounted interband cascade laser | |
Li et al. | Modal gain characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser | |
Ohtani et al. | Electrical laser frequency tuning by three terminal terahertz quantum cascade lasers | |
Chen et al. | High performance external cavity InAs/InP quantum dot lasers | |
Kim et al. | All-optical bistable switching in curved microfiber-coupled photonic crystal resonators | |
Gu et al. | Optical-phonon-mediated photocurrent in terahertz quantum-well photodetectors | |
Fan et al. | Differential gain and gain compression of an overdamped interband cascade laser | |
Suchalkin et al. | Distributed feedback quantum cascade laser with optically tunable emission frequency | |
Suchalkin et al. | Optically tunable long wavelength infrared quantum cascade laser operated at room temperature | |
Dhillon et al. | THz sideband generation at telecom wavelengths in a GaAs-based quantum cascade laser |