[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Weih et al., 2014 - Google Patents

Single mode interband cascade lasers based on lateral metal gratings

Weih et al., 2014

View PDF
Document ID
4776814740549819692
Author
Weih R
Nähle L
Höfling S
Koeth J
Kamp M
Publication year
Publication venue
Applied Physics Letters

External Links

Snippet

Single mode distributed feedback (DFB) interband cascade lasers were realized by placing metal gratings laterally to dry etched ridges. A discrete tuning range of 104 nm could be realized on the same gain material by a variation of the grating period. At room temperature …
Continue reading at research-repository.st-andrews.ac.uk (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feed-back lasers (DFB-lasers)
    • H01S5/125—Distributed Bragg reflector lasers (DBR-lasers)
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well, or supperlattice structures, e.g. single quantum well lasers (SQW lasers), multiple quantum well lasers (MQW lasers), graded index separate confinement hetrostructure lasers (GRINSCH lasers)
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well, or supperlattice structures, e.g. single quantum well lasers (SQW lasers), multiple quantum well lasers (MQW lasers), graded index separate confinement hetrostructure lasers (GRINSCH lasers) in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well, or supperlattice structures, e.g. single quantum well lasers (SQW lasers), multiple quantum well lasers (MQW lasers), graded index separate confinement hetrostructure lasers (GRINSCH lasers) in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/3027—IV compounds
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection; Self pulsating
    • H01S5/0651—Mode control
    • H01S5/0653—Mode suppression, e.g. specific multimode
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semi-conductor body to guide the optical wave; Confining structures perpendicular to the optical axis, e.g. index- or gain-guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure

Similar Documents

Publication Publication Date Title
Weih et al. Single mode interband cascade lasers based on lateral metal gratings
Diehl et al. High-power quantum cascade lasers grown by low-pressure metal organic vapor-phase epitaxy operating in continuous wave above 400K
Bai et al. Room temperature continuous wave operation of quantum cascade lasers with watt-level optical power
Maulini et al. External cavity quantum-cascade laser tunable from 8.2 to10. 4μm using a gain element with a heterogeneous cascade
Lu et al. 2.4 W room temperature continuous wave operation of distributed feedback quantum cascade lasers
Weih et al. Interband cascade lasers with room temperature threshold current densities below 100 A/cm2
Kim et al. Corrugated-sidewall interband cascade lasers with single-mode midwave-infrared emission at room temperature
Kim et al. Mid-infrared distributed-feedback interband cascade lasers with continuous-wave single-mode emission to 80° C
Scheuermann et al. Single-mode interband cascade lasers emitting below 2.8 μm
Mahler et al. Single-mode operation of terahertz quantum cascade lasers with distributed feedback resonators
Wittmann et al. Room temperature, continuous wave operation of distributed feedback quantum cascade lasers with widely spaced operation frequencies
Rauter et al. Master-oscillator power-amplifier quantum cascade laser array
Pflügl et al. Single-mode surface-emitting quantum-cascade lasers
Zhang et al. High-performance uncooled distributed-feedback quantum cascade laser without lateral regrowth
Lu et al. Room-temperature continuous wave operation of distributed feedback quantum cascade lasers with watt-level power output
Fasching et al. Terahertz microcavity quantum-cascade lasers
Gökden et al. High-brightness tapered quantum cascade lasers
Zhou et al. Phase-locked, high power, mid-infrared quantum cascade laser arrays
Deng et al. Linewidth broadening factor of an interband cascade laser
Bewley et al. High-power, high-brightness continuous-wave interband cascade lasers with tapered ridges
Laffaille et al. High temperature operation of short wavelength InAs-based quantum cascade lasers
Yao et al. Surface emitting quantum cascade lasers operating in continuous-wave mode above 70 C at λ∼ 4.6 μm
Briggs et al. Regrowth-free single-mode quantum cascade lasers with power consumption below 1 W
Schwarzer et al. Grating duty-cycle induced enhancement of substrate emission from ring cavity quantum cascade lasers
Mujagić et al. Ring cavity induced threshold reduction in single-mode surface emitting quantum cascade lasers