Zaiats et al., 2017 - Google Patents
Quantum dot light-emitting devices: beyond alignment of energy levelsZaiats et al., 2017
View HTML- Document ID
- 5751151700300125002
- Author
- Zaiats G
- Ikeda S
- Kinge S
- Kamat P
- Publication year
- Publication venue
- ACS applied materials & interfaces
External Links
Snippet
Multinary semiconductor nanoparticles such as CuInS2, AgInS2, and the corresponding alloys with ZnS hold promise for designing future quantum dot light-emitting devices (QLED). The QLED architectures require matching of energy levels between the different electron …
- 239000002096 quantum dot 0 title abstract description 287
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/54—Material technologies
- Y02E10/549—Material technologies organic PV cells
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
- H01L51/0032—Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
- H01L51/0077—Coordination compounds, e.g. porphyrin
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
- H01L51/0032—Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
- H01L51/0034—Organic polymers or oligomers
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
- H01L51/42—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for sensing infra-red radiation, light, electro-magnetic radiation of shorter wavelength or corpuscular radiation and adapted for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation using organic materials as the active part, or using a combination of organic materials with other material as the active part; Multistep processes for their manufacture
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
- H01L51/50—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L2251/00—Indexing scheme relating to organic semiconductor devices covered by group H01L51/00
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Zaiats et al. | Quantum dot light-emitting devices: beyond alignment of energy levels | |
Lin et al. | Nonblinking quantum-dot-based blue light-emitting diodes with high efficiency and a balanced charge-injection process | |
Liu et al. | Highly stable red quantum dot light-emitting diodes with long T 95 operation lifetimes | |
Wang et al. | Blue quantum dot light-emitting diodes with high electroluminescent efficiency | |
Sun et al. | High-performance quantum dot light-emitting diodes based on Al-doped ZnO nanoparticles electron transport layer | |
Kim et al. | Multilayer transfer printing for pixelated, multicolor quantum dot light-emitting diodes | |
Pan et al. | Size tunable ZnO nanoparticles to enhance electron injection in solution processed QLEDs | |
Bai et al. | Hydroxyl-terminated CuInS2 based quantum dots: toward efficient and bright light emitting diodes | |
Liu et al. | Light-emitting diodes based on colloidal silicon quantum dots with octyl and phenylpropyl ligands | |
Tan et al. | Bright and color-saturated emission from blue light-emitting diodes based on solution-processed colloidal nanocrystal quantum dots | |
Shen et al. | High-efficiency, low turn-on voltage blue-violet quantum-dot-based light-emitting diodes | |
Ji et al. | 1, 2-Ethanedithiol treatment for AgIn5S8/ZnS quantum dot light-emitting diodes with high brightness | |
Lee et al. | Highly efficient, color-pure, color-stable blue quantum dot light-emitting devices | |
Chang et al. | Low-temperature solution-processed solar cells based on PbS colloidal quantum dot/CdS heterojunctions | |
Lee et al. | Over 40 cd/A efficient green quantum dot electroluminescent device comprising uniquely large-sized quantum dots | |
Uematsu et al. | Preparation of luminescent AgInS2− AgGaS2 solid solution nanoparticles and their optical properties | |
Yang et al. | All-quantum-dot infrared light-emitting diodes | |
Nann et al. | Quantum dots for electro-optic devices | |
Brovelli et al. | Dual-color electroluminescence from dot-in-bulk nanocrystals | |
Zeng et al. | Improving charge injection via a blade-coating molybdenum oxide layer: toward high-performance large-area quantum-dot light-emitting diodes | |
Jiang et al. | All-inorganic quantum-dot light-emitting diodes with reduced exciton quenching by a MgO decorated inorganic hole transport layer | |
Karatum et al. | Light-emitting devices based on type-II InP/ZnO quantum dots | |
Wepfer et al. | Solution-processed CuInS2-based white QD-LEDs with mixed active layer architecture | |
Wang et al. | Enhanced open-circuit voltage in visible quantum dot photovoltaics by engineering of carrier-collecting electrodes | |
Min et al. | Size engineering of trap effects in oxidized and hydroxylated ZnSe quantum dots |