Jiang et al., 2019 - Google Patents
All-inorganic quantum-dot light-emitting diodes with reduced exciton quenching by a MgO decorated inorganic hole transport layerJiang et al., 2019
- Document ID
- 4590657071403196629
- Author
- Jiang Y
- Jiang L
- Yan Yeung F
- Xu P
- Chen S
- Kwok H
- Li G
- Publication year
- Publication venue
- ACS applied materials & interfaces
External Links
Snippet
Here, wide-bandgap magnesium oxide (MgO) is employed as a decorator for the nickel oxide (NiO x) hole transport layer (HTL), by means of a bulk dopant as well as a surface modifier. QLEDs with Ni0. 88Mg0. 12O x serving as the HTL achieve an∼ 19.5% efficiency …
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide 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[Mg]=O 0 title abstract description 120
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- H01L51/50—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
- H01L51/52—Details of devices
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