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Tsuchiya et al., 2004 - Google Patents

Silicon on thin BOX: A new paradigm of the CMOSFET for low-power high-performance application featuring wide-range back-bias control

Tsuchiya et al., 2004

Document ID
5308355075475125581
Author
Tsuchiya R
Horiuchi M
Kimura S
Yamaoka M
Kawahara T
Maegawa S
Ipposhi T
Ohji Y
Matsuoka H
Publication year
Publication venue
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.

External Links

Snippet

We demonstrate a new MOSFET on ultra-thin BOX that allows wide-range back-bias control in low-power and high-performance applications. The back gate is effective not only to increase the drive current by about 20% in active mode but also in reduce the off-current by …
Continue reading at ieeexplore.ieee.org (other versions)

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    • H01L21/8232—Field-effect technology
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    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
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