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Greco et al., 2017 - Google Patents

Conduction mechanisms at interface of AlN/SiN dielectric stacks with AlGaN/GaN heterostructures for normally-off high electron mobility transistors: Correlating device …

Greco et al., 2017

Document ID
5012878561559106590
Author
Greco G
Fiorenza P
Iucolano F
Severino A
Giannazzo F
Roccaforte F
Publication year
Publication venue
ACS applied materials & interfaces

External Links

Snippet

In this work, the conduction mechanisms at the interface of AlN/SiN dielectric stacks with AlGaN/GaN heterostructures have been studied combining different macroscopic and nanoscale characterizations on bare materials and devices. The AlN/SiN stacks grown on …
Continue reading at pubs.acs.org (other versions)

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