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Tracy et al., 2013 - Google Patents

Electron spin lifetime of a single antimony donor in silicon

Tracy et al., 2013

Document ID
4779528769455887674
Author
Tracy L
Lu T
Bishop N
Ten Eyck G
Pluym T
Wendt J
Lilly M
Carroll M
Publication year
Publication venue
Applied Physics Letters

External Links

Snippet

We present measurements of the electron spin lifetime (T 1) of a single Sb donor in Si. For a magnetic field (B) oriented along the [100] Si crystal direction and low temperature (T) such that k T≪ g μ B⁠, we find T 1− 1= KB 5⁠, where K= 1.7× 10− 3 Hz T− 5⁠. The T 1− 1∝ B 5 …
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    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
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