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González, 2017 - Google Patents

Electrical characterization of reliability in advanced silicon-on-insulator structures for sub-22nm technologies

González, 2017

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Document ID
4708329821046106548
Author
González C
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Bias Instability is a reliability issue affecting the electrical characteristics of a MOS transistor when the gate is stressed with relatively high voltage. In this chapter, the characterization of bias instability is carried out in bare SOI wafers using the Pseudo-MOSFET technique. The …
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