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Lee et al., 2008 - Google Patents

Drain breakdown voltage in MuGFETs: Influence of physical parameters

Lee et al., 2008

Document ID
16854084110494533827
Author
Lee C
Afzalian A
Yan R
Akhavan N
Xiong W
Colinge J
Publication year
Publication venue
IEEE transactions on electron devices

External Links

Snippet

This paper analyzes the drain breakdown voltage of multigate MOSFETs and the influence of parameters such as doping concentration, fin width, and gate length. The good electrostatic control of the active area by the multigate structure improves the drain …
Continue reading at ieeexplore.ieee.org (other versions)

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