Effectiveness of reverse body bias for leakage control in scaled dual Vt CMOS ICs

We present techniques to determine the optimal body bias (forward or reverse) to minimize leakage current and compensate process variations in scaled CMOS technologies. A circuit trades off sub-threshold leakage with band-to-band tunneling leakage at ...

In this paper, the effect of gate tunneling current in ultra-thin gate oxide MOS devices of effective length (L_eff) of 25 nm ( oxide thickness = 1.1 nm), 50 nm ( oxide thickness = 1.5 nm) and 90 nm( oxide thickness = 2.5 nm) is studied using device ...

The high leakage current in deep submicron, short-channel transistors can increase the stand-by power dissipation of future IC products and threaten well established quiescent current (I/sub DDQ/)-based testing techniques. This paper reviews transistor ...