A 150 mW 8:1 MUX and a 170 mW 1:8 DEMUX for 2.4 Gb/s optical-fiber communication systems using n-AlGaAs/i-InGaAs HJFET's
Authors: 
Masahiro Fujii, Keiichi Numata, Tadashi Maeda, Masatoshi Tokushima, Shigeki Wada, Muneo Fukaishi, Masaoki IshikawaAuthors Info & Claims
Pages 43 - 46
Abstract
An 8:1 multiplexer (MUX) and a 1:8 demultiplexer (DEMUX) for 2.4-Gb/s optical communication systems have been developed using 0.35-µm GaAs heterojunction fieldeffect transistors (FET's). To ensure timing margins, a new timing generator with latches and new clock buffers with cross-coupled inverters have been developed. These large-scale integrations (LSI's) operate at over 2.4 Gb/s with a power consumption of 150 mW (MUX) and 170 mW (DEMUX) at a supply voltage of 0.7 V, and at over 5 Gb/s with power consumption of 200 mW at a supply voltage of 0.8 V.
References
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H. Hida, M. Tokushima, T. Maeda, M. Ishikawa, M. Fukaishi, K. Numata, and Y. Ohno, "0.6 V supply voltage 0.25 µm E/D-HJFET(IS3T) LSI technology for low power consumption and high speed LSI's," in Tech. Dig. 1993 GaAs IC Symp., Oct. 1993, pp. 197-200.
[2]
H. Suehiro, M. Shima, T. Shimura, and N. Hara, "Subfemtojoule 0.15 µm InGaP/InGaAs/GaAs pseudomorphic HEMT DCFL circuits under 1 V supply voltage," in Tech. Dig. 1996 GaAs IC Symp., Nov. 1996, pp. 77-80.
[3]
T. Maeda, K. Numata, M. Tokushima, M. Ishikawa, M. Fukaishi, H. Hida, and Y. Ohno, "A novel high-speed low power tri-state driver flip flop (TD-FF) for ultra-low supply voltage GaAs heterojunction FET LSI's," in Tech. Dig. 1993 GaAs IC Symp., Oct. 1993, pp. 75-78.
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T. Maeda, K. Numata, M. Tokushima, M. Ishikawa, M. Fukaishi, H. Hida, and Y. Ohno, "A high-speed low-power tri-state driver flip flop for ultra-low supply voltage GaAs heterojunction FET LSI's," IEEE J. Solid-State Circuits, vol. 31, pp. 240-246, Feb. 1996.
[5]
T. Maeda, K. Numata, M. Fujii, M. Tokushima, S. Wada, M. Fukaishi, and M. Ishikawa, "An ultra-low-power-consumption high-speed GaAs quasidifferential switch flip-flop (QD-FF)," IEEE J. Solid-State Circuits, vol. 31, pp. 1361-1363, 1996.
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T. Seshita, Y. Ikeda, H. Wakimoto, K. Ishida, T. Terada, T. Matsunaga, T. Suzuki, Y. Kitamura, and N. Uchitomi, "A 20 GHz 8 bit multiplexer IC implemented with 0.5 µm WNx/W-gate GaAs MESFET's," IEEE J. Solid-State Circuits, vol. 29, pp. 1583-1588, Dec. 1994.
[8]
K. Tanaka, M. Shikata, T. Kimura, Y. Sano, and M. Akiyama, "High speed 8:1 multiplexer and 1:8 demultiplexer IC's using GaAs DCFL circuit," in Tech. Dig. 1991 GaAs IC Symp., Oct. 1991, pp. 229-232.
- A 150 mW 8:1 MUX and a 170 mW 1:8 DEMUX for 2.4 Gb/s optical-fiber communication systems using n-AlGaAs/i-InGaAs HJFET's
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Copyright © 1998.
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IEEE Educational Activities Department
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Publication History
Published: 01 March 1998
Revised: 29 September 1997
Received: 02 February 1997
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