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Charging effects in CdSe nanocrystals embedded in SiO2 matrix produced by rf magnetron sputtering

Authors:

N. P. Barradas,

Zs. J. Horvath,

M. J. M. GomesAuthors Info & Claims

Microelectronic Engineering, Volume 85, Issue 12

Pages 2374 - 2377

https://doi.org/10.1016/j.mee.2008.09.003

Published: 01 December 2008 Publication History

Abstract

Charging effects in CdSe nanocrystals embedded in SiO"2 matrix fabricated by rf magnetron co-sputtering technique were electrically characterized by means of capacitance-voltage (C-V) combined with current-voltage (I-V). The presence of CdSe nanocrystals was demonstrated by X-ray diffraction technique. The average size of nanocrystals was found to be approximately 3nm. The carriers transport in the CdSe/SiO"2 structure was shown to be a combination of Fowler-Nordheim tunnelling and Poole-Frenkel mechanisms. A memory effect was demonstrated and a retention time was measured.

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Cited By

Liu CCheng CChang-Liao KJeng JDai BTsai C(2009)Characterization of TiOxNy nanoparticles embedded in HfOxNy as charge trapping nodes for nonvolatile memory device applicationsMicroelectronic Engineering10.1016/j.mee.2009.03.03286:7-9(1692-1695)Online publication date: 1-Jul-2009
https://dl.acm.org/doi/10.1016/j.mee.2009.03.032

Index Terms

Charging effects in CdSe nanocrystals embedded in SiO2 matrix produced by rf magnetron sputtering
1. Applied computing
  1. Physical sciences and engineering
    1. Electronics
2. Hardware
  1. Hardware validation
  2. Integrated circuits
    1. Semiconductor memory

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Information

Published In

cover image Microelectronic Engineering

Microelectronic Engineering Volume 85, Issue 12

December, 2008

138 pages

ISSN:0167-9317

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Copyright © Elsevier B.V. © 2008.

Publisher

Elsevier Science Ltd.

United Kingdom

Publication History

Published: 01 December 2008

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Cited By

Liu CCheng CChang-Liao KJeng JDai BTsai C(2009)Characterization of TiOxNy nanoparticles embedded in HfOxNy as charge trapping nodes for nonvolatile memory device applicationsMicroelectronic Engineering10.1016/j.mee.2009.03.03286:7-9(1692-1695)Online publication date: 1-Jul-2009
https://dl.acm.org/doi/10.1016/j.mee.2009.03.032

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