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- articleSeptember 2017
Atomistic tight-binding theory in 2D colloidal CdSe zinc-blende nanoplatelets
Journal of Computational Electronics (SPJCE), Volume 16, Issue 3Pages 796–804https://doi.org/10.1007/s10825-017-1017-4Using atomistic tight-binding theory in conjunction with the configuration interaction description, I investigate the structural and optical properties of colloidal CdSe zinc-blende nanoplatelets. I highlight that the new class of CdSe zinc-blende ...
- research-articleJuly 2016
Novel organic doped inorganic photosensors
Microelectronic Engineering (MCEE), Volume 160, Issue CPages 27–33https://doi.org/10.1016/j.mee.2016.03.001Coumarin doped CdSe/p-Si diodes were prepared to obtain new photodiodes for optoelectronic applications. The chemical composition of Cd and Se in CdSe and coumarin samples was confirmed by EDX spectrum. Using FE-SEM analysis, it was observed that the ...
- articleFebruary 2009
Bright CdSe quantum dot inserted in single ZnSe nanowires
Microelectronics Journal (MICROJ), Volume 40, Issue 2Pages 253–255https://doi.org/10.1016/j.mejo.2008.07.045We report the evidence of CdSe quantum dot (QD) insertion in single defect-free ZnSe nanowire. These nanowires have been grown by molecular beam epitaxy in vapour-liquid-solid growth mode catalysed with gold particles. We developed a two-step process ...
- articleDecember 2008
Charging effects in CdSe nanocrystals embedded in SiO2 matrix produced by rf magnetron sputtering
- S. Levichev,
- A. Chahboun,
- P. Basa,
- A. G. Rolo,
- N. P. Barradas,
- E. Alves,
- Zs. J. Horvath,
- O. Conde,
- M. J. M. Gomes
Microelectronic Engineering (MCEE), Volume 85, Issue 12Pages 2374–2377https://doi.org/10.1016/j.mee.2008.09.003Charging effects in CdSe nanocrystals embedded in SiO"2 matrix fabricated by rf magnetron co-sputtering technique were electrically characterized by means of capacitance-voltage (C-V) combined with current-voltage (I-V). The presence of CdSe ...
- articleMarch 2008
Single-peak excitonic emission of CdSe ultra-thin quantum wells finished with fractional monolayers
Microelectronics Journal (MICROJ), Volume 39, Issue 3-4Pages 594–596https://doi.org/10.1016/j.mejo.2007.07.116Ultra-thin quantum wells (UTQWs) of CdSe grown by atomic layer epitaxy (ALE) present very interesting features, such as intense excitonic luminescence and relatively narrow width. Grown under adequate conditions only a single excitonic peak is exhibited ...
- articleMarch 2008
A new type of structural defects in CdZnSe/ZnSe heterostructures
- L. Borkovska,
- N. Korsunska,
- V. Kladko,
- M. Slobodyan,
- O. Yefanov,
- Ye. Venger,
- T. Kryshtab,
- Yu. Sadofyev,
- I. Kazakov
Microelectronics Journal (MICROJ), Volume 39, Issue 3-4Pages 589–593https://doi.org/10.1016/j.mejo.2007.07.040The changes of structural and photoluminescence (PL) characteristics of MBE-grown CdZnSe/ZnSe single quantum well (QW) structures caused by Cd/Zn interdiffusion were studied by high-resolution X-ray diffraction (HRXRD) and low-temperature PL methods. ...
- articleMarch 2008
Dielectric function analysis of ZnSe and CdSe using parametric semiconductor model
Microelectronics Journal (MICROJ), Volume 39, Issue 3-4Pages 570–572https://doi.org/10.1016/j.mejo.2007.07.038We present the dielectric function spectra of ZnSe and CdSe at room temperature between 0.7 and 9eV obtained by vacuum ultra-violet ellipsometry measurement. We have observed the E1, E1+Δ1, E2, E2+Δ2, E'0, E"0, and E'1 bandgaps that had been predicted in ...
- ArticleJuly 2007
Phase transition on CdSe thin films by changing the volume concentration of Se
- M. Rubín,
- J. I. Cortez,
- H. Juárez,
- E. Rosendo,
- T. Díaz,
- G. García Salgado,
- I. Villaverde,
- R. Lozada-Morales,
- O. Portillo-Moreno,
- O. Zelaya-Ngel
In this work CdSe thin films were grown by chemical bath deposition (CBD)6 onto glass substrate with approximately 2000 Å thickness. The samples have been prepared by changing the volume concentration of the solution in the range of 5-45 ml. of Se, the ...