Abstract
With the advancement of the aerospace industry, the reliability of integrated circuits that can overcome the impact of the radiation environment continues to increase. In this paper, two kinds of radiative effects of integrated circuits are focused on the total ionizing dose effect and the single-event latch-up effect. In response to these two effects, the anti-radiation reinforcement technology of the logic gate standard cell was adopted at the corresponding design level. The design of the schematic and the circuit simulation are performed, including transient simulation and static simulation in this paper. In addition, the standard cell’s logic information is verified and integrated into the standard cell library. A guard ring is designed on the layout of the standard cell so that it has radiation resistance. The layout of the standard cell is abstracted and the file containing the standard cell physical information is exported. The verification results and physical information of the standard cell demonstrate that the proposed technique can achieve the effect of anti-radiation.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Similar content being viewed by others
References
Walker, J.A., Sinnott, R., Stewart, G., Hilder, J.A., Tyrrell, A.M.: Optimizing electronic standard cell libraries for variability tolerance through the nano-CMOS grid. Philos. Trans. R. Soc. A 368(1925) (2010)
Jianhua, J., Man, L., Lei, W., Yumei, Z.: An effective timing characterization method for an accuracy-proved VLSI standard cell library. J. Semicond. 35(2) (2014)
Qi, C., Xiao, L., Guo, J., Wang, T.: Low cost and highly reliable radiation hardened latch design in 65 nm CMOS technology. Microelectron. Reliab. 55(6) (2015)
Kung, D.S., Puri, R.: Optimal P/N Width Ratio Selection for Standard Cell Libraries, pp. 276–283. IEEE (1999)
Brusamarello, L., Wirth, G.I., Roussel, P., Miranda, M.: Fast and accurate statistical characterization of standard cell libraries. Microelectron. Reliab. (12) (2011)
Tao, H.: Design and Verification of High Reliability Standard Cell Library. National University of Defense Technology, Hefei (2011)
Acknowledgements
I am grateful to have the opportunity to enter the HIT microelectronics center. They gave me great encouragement and support during the study. At the same time, I also became interested in digital integrated circuits. Meanwhile, I would like to express my gratitude to my classmates for teaching me the experience and methods in my graduation design work. Their active, optimistic, progressive, hardworking research spirit inspired me at all times.
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2020 Springer Nature Singapore Pte Ltd.
About this paper
Cite this paper
Cao, B., Wu, P., Qin, D. (2020). Design of Standard Cell for Anti-radiation. In: Liang, Q., Liu, X., Na, Z., Wang, W., Mu, J., Zhang, B. (eds) Communications, Signal Processing, and Systems. CSPS 2018. Lecture Notes in Electrical Engineering, vol 517. Springer, Singapore. https://doi.org/10.1007/978-981-13-6508-9_139
Download citation
DOI: https://doi.org/10.1007/978-981-13-6508-9_139
Published:
Publisher Name: Springer, Singapore
Print ISBN: 978-981-13-6507-2
Online ISBN: 978-981-13-6508-9
eBook Packages: EngineeringEngineering (R0)