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Fred G. Kuper
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2000 – 2009
- 2008
- [j14]Fred G. Kuper:
Automotive IC reliability: Elements of the battle towards zero defects. Microelectron. Reliab. 48(8-9): 1459-1463 (2008) - [j13]Guido T. Sasse, Mustafa Acar, Fred G. Kuper, Jurriaan Schmitz
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RF CMOS reliability simulations. Microelectron. Reliab. 48(8-9): 1581-1585 (2008) - 2006
- [j12]Cora Salm
Reduced temperature dependence of hot carrier degradation in deuterated nMOSFETs. Microelectron. Reliab. 46(9-11): 1617-1622 (2006) - 2005
- [j11]M. S. B. Sowariraj, Theo Smedes, Peter C. de Jong, Cora Salm
A 3-D Circuit Model to evaluate CDM performance of ICs. Microelectron. Reliab. 45(9-11): 1425-1429 (2005) - 2004
- [j10]Guoqiao Tao, Andrea Scarpa, Leo van Marwijk, Kitty van Dijk, Fred G. Kuper:
Applying the fWLR concept to Stress induced leakage current in non-volatile memory processes. Microelectron. Reliab. 44(8): 1269-1273 (2004) - [j9]Zhichun Wang, Jan Ackaert, Cora Salm
Plasma Charging Damage Reduction in IC Processing by A Self-balancing Interconnect. Microelectron. Reliab. 44(9-11): 1503-1507 (2004) - 2003
- [j8]Yuan Li, Klaas Jelle Veenstra, Jérôme Dubois, Lei Peters-Wu, Agnes van Zomeren, Fred G. Kuper:
Reservoir effect and maximum allowed VIA misalignment for AlCu interconnect with tungsten VIA plug. Microelectron. Reliab. 43(9-11): 1449-1454 (2003) - [j7]M. S. B. Sowariraj, Theo Smedes, Cora Salm
Role of package parasitics and substrate resistance on the Charged Device Model (CDM) failure levels -An explanation and die protection strategy. Microelectron. Reliab. 43(9-11): 1569-1575 (2003) - 2002
- [j6]N. Tosic Golo, Fred G. Kuper, Ton J. Mouthaan:
Zapping thin film transistors. Microelectron. Reliab. 42(4-5): 747-765 (2002) - [j5]M. S. B. Sowariraj, Theo Smedes, Cora Salm
The influence of technology variation on ggNMOSTs and SCRs against CDM BSD stress. Microelectron. Reliab. 42(9-11): 1287-1292 (2002) - [j4]H. V. Nguyen, Cora Salm
Fast temperature cycling and electromigration induced thin film cracking in multilevel interconnection: experiments and modeling. Microelectron. Reliab. 42(9-11): 1415-1420 (2002) - [j3]H. V. Nguyen, Cora Salm
Simulation and experimental characterization of reservoir and via layout effects on electromigration lifetime. Microelectron. Reliab. 42(9-11): 1421-1425 (2002) - 2001
- [j2]Gianluca Boselli
Investigations on double-diffused MOS transistors under ESD zap conditions. Microelectron. Reliab. 41(3): 395-405 (2001) - [j1]N. Tosic Golo, S. van der Wal, Fred G. Kuper, Ton J. Mouthaan:
The time-voltage trade-off for ESD damage threshold in amorphous silicon hydrogenated thin-film transistors. Microelectron. Reliab. 41(9-10): 1391-1396 (2001)
Coauthor Index
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