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Wenwu Wang 0006
Person information
- affiliation: Chinese Academy of Sciences, Institute of Microelectronics, Beijing, China
Other persons with the same name
- Wenwu Wang 0001
— University of Surrey, Guildford, UK
- Wenwu Wang 0002
- Wenwu Wang 0003
- Wenwu Wang 0004 — Wuhan University, Wuhan, China
- Wenwu Wang 0005 — Harbin Institute of Technology, Harbin, China
- Wenwu Wang 0007
- Wenwu Wang 0008
- Wenwu Wang 0009
- Wenwu Wang 0010
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2020 – today
- 2024
- [c7]Saifei Dai, Songwei Li, Shuangshuang Xu, Fengbin Tian, Junshuai Chai, Jiahui Duan, Wenjuan Xiong, Jinjuan Xiang, Yanrong Wang, Hao Xu, Jing Zhang, Xiaolei Wang, Wenwu Wang:
Role of Nitrogen in Suppressing Interfacial States Generation and Improving Endurance in Ferroelectric Field Effect Transistors. IMW 2024: 1-4 - 2023
- [j4]Zhaohao Zhang
Ultralow-Power Compact Artificial Synapse Based on a Ferroelectric Fin Field-Effect Transistor for Spatiotemporal Information Processing. Adv. Intell. Syst. 5(11) (2023) - [c6]Xianzhou Shao
Comprehensive Study of Endurance Fatigue in the Scaled Si FeFET by in-situ Vth Measurement and Endurance Enhancement Strategy. IMW 2023: 1-4 - 2022
- [c5]S. J. Mao, J. B. Liu, Y. Wang, W. B. Liu, Y. P. Hu, H. W. Cui, R. Zhang, H. C. Liu, Z. X. Wang, N. Zhou, Y. K. Zhang, Hong Yang, Zhenhua Wu, Yongliang Li, J. F. Gao, Anyun Du, Junfeng Li, Jun Luo, Wenwu Wang, Huaxiang Yin:
Investigation on Contacts Thermal Stability for 3D Sequential Integration. IRPS 2022: 37-1 - [c4]Kailiang Huang, Xinlv Duan, Junxiao Feng, Ying Sun, Congyan Lu, Chuanke Chen, Guangfan Jiao, Xinpeng Lin, Jinhai Shao, Shihui Yin, Jiazhen Sheng
Vertical Channel-All-Around (CAA) IGZO FET under 50 nm CD with High Read Current of 32.8 μA/μm (Vth + 1 V), Well-performed Thermal Stability up to 120 ℃ for Low Latency, High-density 2T0C 3D DRAM Application. VLSI Technology and Circuits 2022: 296-297 - 2021
- [c3]Hao Chang, Longda Zhou, Hong Yang, Zhigang Ji, Qianqian Liu, Eddy Simoen, Huaxiang Yin, Wenwu Wang:
Comparative Study on the Energy Distribution of Defects under HCD and NBTI in Short Channel p-FinFETs. IRPS 2021: 1-5 - [c2]Longda Zhou
A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/ AC NBTI Stress/Recovery Condition in Si p-FinFETs. IRPS 2021: 1-7 - 2020
- [j3]Hong Yang, Luwei Qi, Yanbo Zhang, Bo Tang, Qianqian Liu, Hao Xu, Xueli Ma, Xiaolei Wang, Yongliang Li, Huaxiang Yin, Junfeng Li, Huilong Zhu, Chao Zhao, Wenwu Wang, Tianchun Ye
Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks. Sci. China Inf. Sci. 63(2): 129403 (2020) - [j2]Guoliang Tian, Jinshun Bi, Gaobo Xu, Kai Xi, Xueqin Yang, Sandip Majumdar, Huaxiang Yin, Qiuxia Xu, Wenwu Wang:
Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors. Sci. China Inf. Sci. 63(12) (2020) - [c1]Longda Zhou
Comparative Study on the Energy Profile of NBTI-Related Defects in Si and Ferroelectric p-FinFETs. IRPS 2020: 1-6
2010 – 2019
- 2016
- [j1]Weichun Luo, Hong Yang, Wenwu Wang, Yefeng Xu, Bo Tang, Shangqing Ren, Hao Xu, Yanrong Wang, Luwei Qi, Jiang Yan, Huilong Zhu, Chao Zhao, Dapeng Chen, Tianchun Ye
Accurate lifetime prediction for channel hot carrier stress on sub-1 nm equivalent oxide thickness HK/MG nMOSFET with thin titanium nitride capping layer. Microelectron. Reliab. 62: 70-73 (2016)
Coauthor Index
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