More Web Proxy on the site http://driver.im/

default search action

combined dblp search
author search
venue search
publication search

ask others

"Single-event-transient effects in silicon-on-insulator ferroelectric ..."

Guoliang Tian et al. (2020)

> Home

Details and statistics

DOI: 10.1007/S11432-019-2716-5

access: closed

type: Journal Article

metadata version: 2023-01-05

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/chinaf/TianBXXYMYXW20
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/chinaf/TianBXXYMYXW20
Guoliang Tian, Jinshun Bi, Gaobo Xu, Kai Xi, Xueqin Yang, Sandip Majumdar, Huaxiang Yin, Qiuxia Xu, Wenwu Wang:
Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors. Sci. China Inf. Sci. 63(12) (2020)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.