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Weiliang Jing
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2020 – today
- 2022
- [c2]Kailiang Huang, Xinlv Duan, Junxiao Feng, Ying Sun, Congyan Lu, Chuanke Chen, Guangfan Jiao, Xinpeng Lin, Jinhai Shao, Shihui Yin, Jiazhen Sheng
, Zhaogui Wang, Wenqiang Zhang, Xichen Chuai, Jiebin Niu, Wenwu Wang, Ying Wu, Weiliang Jing, Zhengbo Wang, Jeffrey Xu, Guanhua Yang, Di Geng, Ling Li, Ming Liu:
Vertical Channel-All-Around (CAA) IGZO FET under 50 nm CD with High Read Current of 32.8 μA/μm (Vth + 1 V), Well-performed Thermal Stability up to 120 ℃ for Low Latency, High-density 2T0C 3D DRAM Application. VLSI Technology and Circuits 2022: 296-297 - [c1]Jingrui Guo, Ying Sun, Lingfei Wang, Xinlv Duan, Kailiang Huang, Zhaogui Wang, Junxiao Feng, Qian Chen, Shijie Huang, Lihua Xu, Di Geng, Guangfan Jiao, Shihui Yin, Zhengbo Wang, Weiliang Jing, Ling Li, Ming Liu:
Compact Modeling of IGZO-based CAA-FETs with Time-zero-instability and BTI Impact on Device and Capacitor-less DRAM Retention Reliability. VLSI Technology and Circuits 2022: 300-301
2010 – 2019
- 2019
- [j6]Jipeng Guo
Subsystem under 3D-Storage Class Memory on a chip. Comput. Electr. Eng. 74: 47-58 (2019) - 2017
- [j5]Yuan Du, Yong Ye, Weiliang Jing, Zhenhua Li, Xiaoyun Li, Zhitang Song, Bomy Chen:
Multi-core architecture with asynchronous clocks to prevent power analysis attacks. IEICE Electron. Express 14(4): 20161220 (2017) - [j4]Yong Ye, Yuan Du, Weiliang Jing, Xiaoyun Li, Zhitang Song, Bomy Chen:
CAM-based retention-aware DRAM (CRA-DRAM) for refresh power reduction. IEICE Electron. Express 14(10): 20170053 (2017) - [j3]Yong Ye, Yuan Du, Weiliang Jing, Xiaoyun Li, Zhitang Song, Bomy Chen:
Erratum: CAM-based retention-aware DRAM (CRA-DRAM) for refresh power reduction [IEICE Electronics Express Vol. 14 (2017) No. 10 pp. 20170053]. IEICE Electron. Express 14(11): 20178001 (2017) - [j2]Yuan Du, Yong Ye, Weiliang Jing, Xiaoyun Li, Zhitang Song, Bomy Chen:
Logic area reduction using the deep trench isolation technique based on 40 nm embedded PCM process. IEICE Electron. Express 14(15): 20170628 (2017) - [j1]Weiliang Jing, Kai Yang, Yinyin Lin, Beomseop Lee, Sangkyu Yoon, Yong Ye, Yuan Du, Bomy Chen:
Retention-Aware Hybrid Main Memory (RAHMM): Big DRAM and Little SCM. IEEE Trans. Computers 66(5): 912-918 (2017)
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