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Nahid M. Hossain
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- affiliation: University of Missouri-Kansas City, MO, USA
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2010 – 2019
- 2018
- [c14]Nahid M. Hossain, Ritesh Kumar Reddy Kuchukulla, Masud H. Chowdhury:
Failure Analysis of the Through Silicon Via in Three-dimensional Integrated Circuit (3D-IC). ISCAS 2018: 1-4 - [c13]Mahmood Uddin Mohammed, Nahid M. Hossain, Masud H. Chowdhury:
A Disturb Free Read Port 8T SRAM Bitcell Circuit Design with Virtual Ground Scheme. MWSCAS 2018: 412-415 - 2017
- [c12]Abdul Hamid Bin Yousuf, Nahid M. Hossain, Masud H. Chowdhury:
Impacts of different shapes of through-silicon-via core on 3D IC performance. ISCAS 2017: 1-4 - [c11]Lohith Kumar Vemula, Nahid M. Hossain, Masud H. Chowdhury:
Error free sense amplifier circuit design for STT-MRAM nonvolatile memory. MWSCAS 2017: 703-706 - [c10]Lohith Kumar Vemula, Nahid M. Hossain, Masud H. Chowdhury:
Emerging STT-MRAM circuit and architecture co-design in 45nm technology. MWSCAS 2017: 719-722 - [c9]Nahid M. Hossain, Emeshaw Ashenafi, Moqbull Hossen, Azzedin D. Es-Sakhi, Masud H. Chowdhury:
Multilayer graphene nanoribbon based BioFET sensor design. MWSCAS 2017: 1402-1405 - [c8]Nahid M. Hossain, Arif Iqbal, Hemanshu Shishupal, Masud H. Chowdhury:
Tunneling transistor based 6T SRAM bitcell circuit design in sub-10nm domain. MWSCAS 2017: 1485-1488 - 2015
- [j1]Nahid M. Hossain, Masud H. Chowdhury:
Multilayer Graphene Nanoribbon and Carbon Nanotube Based Floating Gate Transistor for Nonvolatile Flash Memory. ACM J. Emerg. Technol. Comput. Syst. 12(1): 2:1-2:17 (2015) - [c7]Abdul Hamid Bin Yousuf, Nahid M. Hossain, Masud H. Chowdhury:
Performance analysis of through silicon via (TSV) and through glass via (TGV) for different materials. ISCAS 2015: 1957-1960 - [c6]Nahid M. Hossain, Jitendra Koppu, Masud H. Chowdhury:
Analysis of radiation effect on the threshold voltage of flash memory device. ISCAS 2015: 2896-2899 - [c5]Ritesh Chowdri, Nahid M. Hossain, Masud H. Chowdhury:
High-speed graphene based quantum-optical interconnect design. MWSCAS 2015: 1-4 - 2014
- [c4]Nahid M. Hossain, Masud H. Chowdhury:
Multilayer graphene nanoribbon floating gate transistor for flash memory. ISCAS 2014: 806-809 - [c3]Nahid M. Hossain, Masud H. Chowdhury:
Graphene and CNT based flash memory: Impacts of scaling control and tunnel oxide thickness. MWSCAS 2014: 985-988 - [c2]Nahid M. Hossain, Md Belayat Hossain, Masud H. Chowdhury:
Multilayer layer graphene nanoribbon flash memory: Analysis of programming and erasing operation. SoCC 2014: 24-28 - 2013
- [c1]Nahid M. Hossain, MunEm Hossain, Abdul Hamid Bin Yousuf, Masud H. Chowdhury:
Thermal aware Graphene based Through Silicon Via design for 3D IC. 3DIC 2013: 1-4
Coauthor Index
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