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Luc De Schepper
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2000 – 2009
- 2008
- [j8]Jan Ackaert, R. Charavel, K. Dhondt, B. Vlachakis, Luc De Schepper, M. Millecam, E. Vandevelde, P. Bogaert, A. Iline, Eddy De Backer, Alexandru Vlad, Jean-Pierre Raskin:
MIMC reliability and electrical behavior defined by a physical layer property of the dielectric. Microelectron. Reliab. 48(8-9): 1553-1556 (2008) - 2003
- [j7]Stefano Aresu, Ward De Ceuninck, G. Knuyt, J. Mertens, Jean Manca, Luc De Schepper, Robin Degraeve, Ben Kaczer, Marc D'Olieslaeger, Jan D'Haen:
A new method for the analysis of high-resolution SILC data. Microelectron. Reliab. 43(9-11): 1483-1488 (2003) - 2002
- [j6]R. Petersen, Ward De Ceuninck, Jan D'Haen, Marc D'Olieslaeger, Luc De Schepper, Olivier Vendier, Hervé Blanck, Dominique Pons:
Exploring the limits of Arrhenius-based life testing with heterojunction bipolar transistor technology. Microelectron. Reliab. 42(9-11): 1359-1363 (2002) - [j5]E. Andries, R. Dreesen, Kris Croes, Ward De Ceuninck, Luc De Schepper, Guido Groeseneken, K. F. Lo, Marc D'Olieslaeger, Jan D'Haen:
Statistical aspects of the degradation of LDD nMOSFETs. Microelectron. Reliab. 42(9-11): 1409-1413 (2002) - [j4]Stefano Aresu, Ward De Ceuninck, R. Dreesen, Kris Croes, E. Andries, Jean Manca, Luc De Schepper, Robin Degraeve, Ben Kaczer, Marc D'Olieslaeger:
High-resolution SILC measurements of thin SiO2 at ultra low voltages. Microelectron. Reliab. 42(9-11): 1485-1489 (2002) - 2001
- [j3]R. Dreesen, Kris Croes, Jean Manca, Ward De Ceuninck, Luc De Schepper, A. Pergoot, Guido Groeseneken:
A new degradation model and lifetime extrapolation technique for lightly doped drain nMOSFETs under hot-carrier degradation. Microelectron. Reliab. 41(3): 437-443 (2001) - [j2]Kris Croes, R. Dreesen, Jean Manca, Ward De Ceuninck, Luc De Schepper, Luc Tielemans, P. J. van der Wel:
High-resolution in-situ of gold electromigration: test time reduction. Microelectron. Reliab. 41(9-10): 1439-1442 (2001) - [j1]R. Petersen, Ward De Ceuninck, Luc De Schepper, Olivier Vendier, Hervé Blanck, Dominique Pons:
Determination of the thermal resistance and current exponent of heterojunction bipolar transistors for reliability evaluation. Microelectron. Reliab. 41(9-10): 1591-1596 (2001)
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