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Stéphane Lefebvre
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- affiliation: SATIE, ENS Cachan, CNAM, CNRS, France
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2010 – 2019
- 2019
- [j27]F. Boige, Frédéric Richardeau
, Stéphane Lefebvre, Marc Cousineau:
SiC power MOSFET in short-circuit operation: Electro-thermal macro-modelling combining physical and numerical approaches with circuit-type implementation. Math. Comput. Simul. 158: 375-386 (2019) - 2018
- [j26]F. Boige, Frédéric Richardeau
Ensure an original and safe "fail-to-open" mode in planar and trench power SiC MOSFET devices in extreme short-circuit operation. Microelectron. Reliab. 88-90: 598-603 (2018) - [j25]Oriol Avino-Salvado
Threshold voltage instability in SiC MOSFETs as a consequence of current conduction in their body diode. Microelectron. Reliab. 88-90: 636-640 (2018) - [j24]Tien Anh Nguyen, Stéphane Lefebvre, Stephane Azzopardi:
Effect of short circuit aging on safe operating area of SiC MOSFET. Microelectron. Reliab. 88-90: 645-651 (2018) - [j23]Yoann Pascal
Experimental investigation of the reliability of Printed Circuit Board (PCB)-embedded power dies with pressed contact made of metal foam. Microelectron. Reliab. 88-90: 707-714 (2018) - 2017
- [j22]F. Boige, Frédéric Richardeau
Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation. Microelectron. Reliab. 76-77: 500-506 (2017) - [j21]R. Ruffilli, Mounira Berkani
Mechanisms of power module source metal degradation during electro-thermal aging. Microelectron. Reliab. 76-77: 507-511 (2017) - 2016
- [j20]Matthieu Landel
[131] Experimental study of the short-circuit robustness of 600 V E-mode GaN transistors. Microelectron. Reliab. 64: 560-565 (2016) - 2015
- [j19]Boubekeur Tala-Ighil, Jean-Lionel Trolet, Hamid Gualous, Philippe Mary, Stéphane Lefebvre:
Experimental and comparative study of gamma radiation effects on Si-IGBT and SiC-JFET. Microelectron. Reliab. 55(9-10): 1512-1516 (2015) - [j18]Cheng Chen, Denis Labrousse, Stéphane Lefebvre, Mickael Petit
Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs. Microelectron. Reliab. 55(9-10): 1708-1713 (2015) - [j17]R. Ruffilli, Mounira Berkani
In-depth investigation of metallization aging in power MOSFETs. Microelectron. Reliab. 55(9-10): 1966-1970 (2015) - 2014
- [j16]Michele Riccio
3-D electrothermal simulation of active cycling on smart power MOSFETs during short-circuit and UIS conditions. Microelectron. Reliab. 54(9-10): 1845-1850 (2014) - 2013
- [j15]Gilles Rostaing, Mounira Berkani
Reliability of power MOSFET-based smart switches under normal and extreme conditions for 24 V battery system applications. Microelectron. Reliab. 53(9-11): 1703-1706 (2013) - [j14]D. Othman, Stéphane Lefebvre, Mounira Berkani
Robustness of 1.2 kV SiC MOSFET devices. Microelectron. Reliab. 53(9-11): 1735-1738 (2013) - 2012
- [j13]D. Othman, M. Bouarroudj-Berkani, Stéphane Lefebvre, Ali Ibrahim
Comparison study on performances and robustness between SiC MOSFET & JFET devices - Abilities for aeronautics application. Microelectron. Reliab. 52(9-10): 1859-1864 (2012) - [c1]Yi Tian, Dejan Vasic
Application of thermoelectricity to IGBT for temperature regulation and energy harvesting. ISIE 2012: 211-216 - 2011
- [j12]Amrane Oukaour, Boubekeur Tala-Ighil, Bertrand Pouderoux, M. Tounsi, M. Bouarroudj-Berkani, Stéphane Lefebvre, Bertrand Boudart:
Ageing defect detection on IGBT power modules by artificial training methods based on pattern recognition. Microelectron. Reliab. 51(2): 386-391 (2011) - [j11]Tien Anh Nguyen, Pierre-Yves Joubert
Study for the non-contact characterization of metallization ageing of power electronic semiconductor devices using the eddy current technique. Microelectron. Reliab. 51(6): 1127-1135 (2011) - [j10]S. Pietranico, Stéphane Lefebvre, S. Pommier, M. Berkani Bouaroudj, S. Bontemps:
A study of the effect of degradation of the aluminium metallization layer in the case of power semiconductor devices. Microelectron. Reliab. 51(9-11): 1824-1829 (2011) - [j9]Vanessa Smet, François Forest, Jean-Jacques Huselstein, Frédéric Richardeau
Ageing and Failure Modes of IGBT Modules in High-Temperature Power Cycling. IEEE Trans. Ind. Electron. 58(10): 4931-4941 (2011) - 2010
- [j8]M. Bouarroudj-Berkani, D. Othman, Stéphane Lefebvre, S. Moumen, Zoubir Khatir, T. Ben Sallah:
Ageing of SiC JFET transistors under repetitive current limitation conditions. Microelectron. Reliab. 50(9-11): 1532-1537 (2010)
2000 – 2009
- 2009
- [j7]S. Pietranico, S. Pommier, Stéphane Lefebvre, Zoubir Khatir, S. Bontemps:
Characterisation of power modules ceramic substrates for reliability aspects. Microelectron. Reliab. 49(9-11): 1260-1266 (2009) - [j6]Mounira Berkani
Estimation of SiC JFET temperature during short-circuit operations. Microelectron. Reliab. 49(9-11): 1358-1362 (2009) - 2007
- [j5]Zoubir Khatir, Stéphane Lefebvre, F. Saint-Eve:
Experimental and numerical investigations on delayed short-circuit failure mode of single chip IGBT devices. Microelectron. Reliab. 47(2-3): 422-428 (2007) - [j4]M. Bouarroudj, Zoubir Khatir, Jean-Pierre Ousten, F. Badel, Laurent Dupont
Degradation behavior of 600 V-200 A IGBT modules under power cycling and high temperature environment conditions. Microelectron. Reliab. 47(9-11): 1719-1724 (2007) - [j3]Laurent Dupont
Failure modes on low voltage power MOSFETs under high temperature application. Microelectron. Reliab. 47(9-11): 1767-1772 (2007) - 2006
- [j2]Laurent Dupont
Effects of metallization thickness of ceramic substrates on the reliability of power assemblies under high temperature cycling. Microelectron. Reliab. 46(9-11): 1766-1771 (2006) - 2004
- [j1]Zoubir Khatir, Stéphane Lefebvre:
Boundary element analysis of thermal fatigue effects on high power IGBT modules. Microelectron. Reliab. 44(6): 929-938 (2004)
Coauthor Index
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